KSA1013YBU
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- Mfr.Part #
- KSA1013YBU
- Manufacturer
- onsemi
- Package / Case
- TO-226-3, TO-92-3 Long Body
- Datasheet
- Download
- Description
- TRANS PNP 160V 1A TO92-3
- Stock
- 4,173
- In Stock ：
- 4,173
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- Manufacturer :
- onsemi
- Product Category :
- Transistors - Bipolar (BJT) - Single
- Mount :
- Through Hole
- Moisture Sensitivity Level (MSL) :
- 1 (Unlimited)
- Number of Elements :
- 1
- Radiation Hardening :
- No
- Collector Emitter Breakdown Voltage :
- 160V
- Max Breakdown Voltage :
- 160V
- Transistor Application :
- AMPLIFIER
- Pbfree Code :
- yes
- Collector Base Voltage (VCBO) :
- -160V
- Max Power Dissipation :
- 900mW
- Current Rating :
- -1A
- Transistor Type :
- PNP
- Polarity/Channel Type :
- PNP
- Voltage - Rated DC :
- -160V
- Mounting Type :
- Through Hole
- Weight :
- 185mg
- Collector Emitter Voltage (VCEO) :
- 160V
- JESD-609 Code :
- e3
- RoHS Status :
- ROHS3 Compliant
- Packaging :
- Bulk
- Number of Pins :
- 3
- Element Configuration :
- Single
- Collector Emitter Saturation Voltage :
- -1.5V
- Frequency :
- 50MHz
- REACH SVHC :
- No SVHC
- Transistor Element Material :
- SILICON
- Transition Frequency :
- 50MHz
- Contact Plating :
- Tin
- ECCN Code :
- EAR99
- Terminal Position :
- BOTTOM
- Emitter Base Voltage (VEBO) :
- -6V
- Current - Collector Cutoff (Max) :
- 1μA ICBO
- Package / Case :
- TO-226-3, TO-92-3 Long Body
- hFE Min :
- 60
- Power Dissipation :
- 900mW
- Vce Saturation (Max) @ Ib, Ic :
- 1.5V @ 50mA, 500mA
- Number of Terminations :
- 3
- Lifecycle Status :
- ACTIVE (Last Updated: 17 hours ago)
- DC Current Gain (hFE) (Min) @ Ic, Vce :
- 60 @ 200mA 5V
- Operating Temperature :
- 150°C TJ
- Factory Lead Time :
- 6 Weeks
- Gain Bandwidth Product :
- 50MHz
- Max Collector Current :
- 1A
- Lead Free :
- Lead Free
- Base Part Number :
- KSA1013
- Datasheets
- KSA1013YBU
KSA1013YBU Documents
PNP 150°C TJ 1μA ICBO 1 Elements 3 Terminations SILICON PNP TO-226-3, TO-92-3 Long Body Bulk Through Hole
KSA1013YBU Overview
In this device, the DC current gain is 60 @ 200mA 5V, which is the ratio between the base current and the collector current.This system offers maximum design flexibility due to a collector emitter saturation voltage of -1.5V.Single BJT transistor means that Ic is at Single BJT transistors maximum value (saturated), so the vce saturation(Max) is equal to 1.5V @ 50mA, 500mA.With the emitter base voltage set at -6V, an efficient operation can be achieved.As defined by current rating, the maximum current a fuse can carry without deteriorating too much is -1A for this device.Single BJT transistor contains a transSingle BJT transistorion frequency of 50MHz.Input voltage breakdown is available at 160V volts.Single BJT transistor is possible for the collector current to fall as low as 1A volts at Single BJT transistors maximum.
KSA1013YBU Features
the DC current gain for this device is 60 @ 200mA 5V
a collector emitter saturation voltage of -1.5V
the vce saturation(Max) is 1.5V @ 50mA, 500mA
the emitter base voltage is kept at -6V
the current rating of this device is -1A
a transition frequency of 50MHz
KSA1013YBU Applications
There are a lot of ON Semiconductor
KSA1013YBU applications of single BJT transistors.
- Inverter
- Interface
- Driver
- Muting
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