KSA1013YBU
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- Mfr.Part #
- KSA1013YBU
- Manufacturer
- onsemi
- Package / Case
- TO-226-3, TO-92-3 Long Body
- Datasheet
- Download
- Description
- TRANS PNP 160V 1A TO92-3
- Stock
- 4,173
- In Stock ：
- 4,173
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- Manufacturer :
- onsemi
- Product Category :
- Transistors - Bipolar (BJT) - Single
- Mounting Type :
- Through Hole
- Radiation Hardening :
- No
- Current Rating :
- -1A
- Number of Elements :
- 1
- Emitter Base Voltage (VEBO) :
- -6V
- Max Breakdown Voltage :
- 160V
- Collector Base Voltage (VCBO) :
- -160V
- Transistor Element Material :
- SILICON
- Factory Lead Time :
- 6 Weeks
- REACH SVHC :
- No SVHC
- Voltage - Rated DC :
- -160V
- ECCN Code :
- EAR99
- Number of Terminations :
- 3
- hFE Min :
- 60
- Transition Frequency :
- 50MHz
- Package / Case :
- TO-226-3, TO-92-3 Long Body
- Collector Emitter Voltage (VCEO) :
- 160V
- Polarity/Channel Type :
- PNP
- Gain Bandwidth Product :
- 50MHz
- Lead Free :
- Lead Free
- Weight :
- 185mg
- Number of Pins :
- 3
- Operating Temperature :
- 150°C TJ
- Terminal Position :
- BOTTOM
- Transistor Application :
- AMPLIFIER
- Max Power Dissipation :
- 900mW
- DC Current Gain (hFE) (Min) @ Ic, Vce :
- 60 @ 200mA 5V
- Pbfree Code :
- yes
- Base Part Number :
- KSA1013
- Max Collector Current :
- 1A
- Mount :
- Through Hole
- JESD-609 Code :
- e3
- Moisture Sensitivity Level (MSL) :
- 1 (Unlimited)
- Collector Emitter Breakdown Voltage :
- 160V
- Frequency :
- 50MHz
- Power Dissipation :
- 900mW
- Lifecycle Status :
- ACTIVE (Last Updated: 17 hours ago)
- Transistor Type :
- PNP
- Current - Collector Cutoff (Max) :
- 1μA ICBO
- Packaging :
- Bulk
- RoHS Status :
- ROHS3 Compliant
- Element Configuration :
- Single
- Collector Emitter Saturation Voltage :
- -1.5V
- Contact Plating :
- Tin
- Vce Saturation (Max) @ Ib, Ic :
- 1.5V @ 50mA, 500mA
- Datasheets
- KSA1013YBU
KSA1013YBU Documents
PNP 150°C TJ 1μA ICBO 1 Elements 3 Terminations SILICON PNP TO-226-3, TO-92-3 Long Body Bulk Through Hole
KSA1013YBU Overview
In this device, the DC current gain is 60 @ 200mA 5V, which is the ratio between the base current and the collector current.This system offers maximum design flexibility due to a collector emitter saturation voltage of -1.5V.Single BJT transistor means that Ic is at Single BJT transistors maximum value (saturated), so the vce saturation(Max) is equal to 1.5V @ 50mA, 500mA.With the emitter base voltage set at -6V, an efficient operation can be achieved.As defined by current rating, the maximum current a fuse can carry without deteriorating too much is -1A for this device.Single BJT transistor contains a transSingle BJT transistorion frequency of 50MHz.Input voltage breakdown is available at 160V volts.Single BJT transistor is possible for the collector current to fall as low as 1A volts at Single BJT transistors maximum.
KSA1013YBU Features
the DC current gain for this device is 60 @ 200mA 5V
a collector emitter saturation voltage of -1.5V
the vce saturation(Max) is 1.5V @ 50mA, 500mA
the emitter base voltage is kept at -6V
the current rating of this device is -1A
a transition frequency of 50MHz
KSA1013YBU Applications
There are a lot of ON Semiconductor
KSA1013YBU applications of single BJT transistors.
- Inverter
- Interface
- Driver
- Muting
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