KSA1013YBU
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- Mfr.Part #
- KSA1013YBU
- Manufacturer
- onsemi
- Package / Case
- TO-226-3, TO-92-3 Long Body
- Datasheet
- Download
- Description
- TRANS PNP 160V 1A TO92-3
- Stock
- 4,173
- In Stock ：
- 4,173
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- Manufacturer :
- onsemi
- Product Category :
- Transistors - Bipolar (BJT) - Single
- Transistor Application :
- AMPLIFIER
- Current - Collector Cutoff (Max) :
- 1μA ICBO
- Power Dissipation :
- 900mW
- Emitter Base Voltage (VEBO) :
- -6V
- Number of Pins :
- 3
- Number of Terminations :
- 3
- Mount :
- Through Hole
- Mounting Type :
- Through Hole
- DC Current Gain (hFE) (Min) @ Ic, Vce :
- 60 @ 200mA 5V
- Element Configuration :
- Single
- Contact Plating :
- Tin
- Max Breakdown Voltage :
- 160V
- Gain Bandwidth Product :
- 50MHz
- hFE Min :
- 60
- Terminal Position :
- BOTTOM
- Packaging :
- Bulk
- REACH SVHC :
- No SVHC
- Operating Temperature :
- 150°C TJ
- Lead Free :
- Lead Free
- Collector Base Voltage (VCBO) :
- -160V
- Factory Lead Time :
- 6 Weeks
- Moisture Sensitivity Level (MSL) :
- 1 (Unlimited)
- Max Power Dissipation :
- 900mW
- Vce Saturation (Max) @ Ib, Ic :
- 1.5V @ 50mA, 500mA
- Transition Frequency :
- 50MHz
- Collector Emitter Saturation Voltage :
- -1.5V
- Collector Emitter Voltage (VCEO) :
- 160V
- Weight :
- 185mg
- Base Part Number :
- KSA1013
- JESD-609 Code :
- e3
- RoHS Status :
- ROHS3 Compliant
- Current Rating :
- -1A
- Package / Case :
- TO-226-3, TO-92-3 Long Body
- ECCN Code :
- EAR99
- Pbfree Code :
- yes
- Collector Emitter Breakdown Voltage :
- 160V
- Lifecycle Status :
- ACTIVE (Last Updated: 17 hours ago)
- Radiation Hardening :
- No
- Frequency :
- 50MHz
- Polarity/Channel Type :
- PNP
- Transistor Type :
- PNP
- Max Collector Current :
- 1A
- Voltage - Rated DC :
- -160V
- Number of Elements :
- 1
- Transistor Element Material :
- SILICON
- Datasheets
- KSA1013YBU
PNP 150°C TJ 1μA ICBO 1 Elements 3 Terminations SILICON PNP TO-226-3, TO-92-3 Long Body Bulk Through Hole
KSA1013YBU Overview
In this device, the DC current gain is 60 @ 200mA 5V, which is the ratio between the base current and the collector current.This system offers maximum design flexibility due to a collector emitter saturation voltage of -1.5V.Single BJT transistor means that Ic is at Single BJT transistors maximum value (saturated), so the vce saturation(Max) is equal to 1.5V @ 50mA, 500mA.With the emitter base voltage set at -6V, an efficient operation can be achieved.As defined by current rating, the maximum current a fuse can carry without deteriorating too much is -1A for this device.Single BJT transistor contains a transSingle BJT transistorion frequency of 50MHz.Input voltage breakdown is available at 160V volts.Single BJT transistor is possible for the collector current to fall as low as 1A volts at Single BJT transistors maximum.
KSA1013YBU Features
the DC current gain for this device is 60 @ 200mA 5V
a collector emitter saturation voltage of -1.5V
the vce saturation(Max) is 1.5V @ 50mA, 500mA
the emitter base voltage is kept at -6V
the current rating of this device is -1A
a transition frequency of 50MHz
KSA1013YBU Applications
There are a lot of ON Semiconductor
KSA1013YBU applications of single BJT transistors.
- Inverter
- Interface
- Driver
- Muting
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