KSA1010OTU

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Mfr.Part #
KSA1010OTU
Manufacturer
onsemi
Package / Case
TO-220-3
Datasheet
Download
Description
TRANS PNP 100V 7A TO220-3
Stock
7,427
In Stock :
7,427

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Manufacturer :
onsemi
Product Category :
Transistors - Bipolar (BJT) - Single
Operating Temperature :
150°C TJ
Current - Collector (Ic) (Max) :
7A
Moisture Sensitivity Level (MSL) :
1 (Unlimited)
Mounting Type :
Through Hole
Packaging :
Tube
Voltage - Collector Emitter Breakdown (Max) :
100V
Package / Case :
TO-220-3
Power - Max :
1.5W
Vce Saturation (Max) @ Ib, Ic :
600mV @ 500mA, 5A
DC Current Gain (hFE) (Min) @ Ic, Vce :
60 @ 3A 5V
Transistor Type :
PNP
Current - Collector Cutoff (Max) :
10μA ICBO
Base Part Number :
KSA1010
Datasheets
KSA1010OTU
Introducing Transistors - Bipolar (BJT) - Single onsemi KSA1010OTU from Chip IC,where excellence meets affordability. This product stands out with its Operating Temperature:150°C TJ, Mounting Type:Through Hole, Package / Case:TO-220-3, Base Part Number:KSA1010, KSA1010OTU pinout, KSA1010OTU datasheet PDF, KSA1010OTU amp .Beyond Transistors - Bipolar (BJT) - Single onsemi KSA1010OTU ,we also offer BC817-40,235, BC817-40,215, BC807-40,215, Our vast inventory has you covered. Contact us now for immediate solutions.

onsemi KSA1010OTU


PNP 150°C TJ 10μA ICBO TO-220-3 Tube Through Hole

KSA1010OTU Overview


This device has a DC current gain of 60 @ 3A 5V, which is the ratio between the collector current and the base current.A VCE saturation indicates a maximum value of Ic (saturation), and a maximum value of VCE saturation (Max).Detection of Collector Emitter Breakdown at 100V maximal voltage is present.

KSA1010OTU Features


the DC current gain for this device is 60 @ 3A 5V
the vce saturation(Max) is 600mV @ 500mA, 5A


KSA1010OTU Applications


There are a lot of ON Semiconductor
KSA1010OTU applications of single BJT transistors.


  • Inverter
  • Interface
  • Driver
  • Muting
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