KSA1013OTA

Manufacturer :

onsemi

Product Category :

Transistors - Bipolar (BJT) - Single

Terminal Finish :

Tin (Sn)

DC Current Gain (hFE) (Min) @ Ic, Vce :

100 @ 200mA 5V

Max Power Dissipation :

900mW

Height :

8.2mm

Number of Elements :

1

Transistor Type :

PNP

Frequency :

50MHz

RoHS Status :

ROHS3 Compliant

Lead Free :

Lead Free

Length :

5.1mm

Lifecycle Status :

LAST SHIPMENTS (Last Updated: 16 hours ago)

Number of Pins :

3

Packaging :

Tape and Box (TB)

Current - Collector Cutoff (Max) :

1μA ICBO

Transistor Application :

AMPLIFIER

Base Part Number :

KSA1013

Emitter Base Voltage (VEBO) :

-6V

Max Breakdown Voltage :

160V

Collector Emitter Saturation Voltage :

-1.5V

Radiation Hardening :

No

Width :

4.1mm

Vce Saturation (Max) @ Ib, Ic :

1.5V @ 50mA, 500mA

Power Dissipation :

900mW

Weight :

371.1027mg

Gain Bandwidth Product :

50MHz

Max Collector Current :

1A

Terminal Position :

BOTTOM

Collector Emitter Voltage (VCEO) :

160V

JESD-609 Code :

e3

Package / Case :

TO-226-3, TO-92-3 Long Body (Formed Leads)

Element Configuration :

Single

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

Transition Frequency :

50MHz

Number of Terminations :

3

hFE Min :

60

Voltage - Rated DC :

-160V

Pbfree Code :

yes

Operating Temperature :

150°C TJ

Current Rating :

-1A

ECCN Code :

EAR99

Factory Lead Time :

6 Weeks

Published :

2013

Mounting Type :

Through Hole

Collector Emitter Breakdown Voltage :

160V

Polarity/Channel Type :

PNP

Collector Base Voltage (VCBO) :

-160V

Transistor Element Material :

SILICON

Mount :

Through Hole