KSA1015GRTA
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- Mfr.Part #
- KSA1015GRTA
- Manufacturer
- Fairchild Semiconductor
- Package / Case
- TO-226-3, TO-92-3 (TO-226AA) (Formed Leads)
- Datasheet
- Download
- Description
- TRANS PNP 50V 0.15A TO92-3
- Stock
- 1
- In Stock ：
- 1
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- Manufacturer :
- Fairchild Semiconductor
- Product Category :
- Transistors - Bipolar (BJT) - Single
- Number of Pins :
- 3
- DC Current Gain (hFE) (Min) @ Ic, Vce :
- 200 @ 2mA 6V
- Published :
- 2007
- Transistor Application :
- AMPLIFIER
- ECCN Code :
- EAR99
- Power Dissipation :
- 400mW
- Operating Temperature :
- 150°C TJ
- Mounting Type :
- Through Hole
- Element Configuration :
- Single
- Pbfree Code :
- yes
- Number of Terminations :
- 3
- Mount :
- Through Hole
- Terminal Position :
- BOTTOM
- Emitter Base Voltage (VEBO) :
- -5V
- Transistor Type :
- PNP
- Radiation Hardening :
- No
- REACH SVHC :
- No SVHC
- Collector Base Voltage (VCBO) :
- -50V
- Current Rating :
- -150mA
- Transistor Element Material :
- SILICON
- Width :
- 4.19mm
- Package / Case :
- TO-226-3, TO-92-3 (TO-226AA) (Formed Leads)
- Current - Collector Cutoff (Max) :
- 100nA ICBO
- Voltage - Rated DC :
- -50V
- Collector Emitter Saturation Voltage :
- -300mV
- RoHS Status :
- ROHS3 Compliant
- Length :
- 5.2mm
- Terminal Finish :
- Tin (Sn)
- Max Breakdown Voltage :
- 50V
- Gain Bandwidth Product :
- 80MHz
- Frequency :
- 80MHz
- Factory Lead Time :
- 6 Weeks
- Lifecycle Status :
- LIFETIME (Last Updated: 18 hours ago)
- Polarity/Channel Type :
- PNP
- Collector Emitter Breakdown Voltage :
- 50V
- Height :
- 5.33mm
- Number of Elements :
- 1
- Moisture Sensitivity Level (MSL) :
- 1 (Unlimited)
- Base Part Number :
- KSA1015
- JESD-609 Code :
- e3
- Lead Free :
- Lead Free
- hFE Min :
- 70
- Transition Frequency :
- 80MHz
- Weight :
- 240mg
- Max Power Dissipation :
- 400mW
- Packaging :
- Tape and Box (TB)
- Collector Emitter Voltage (VCEO) :
- 50V
- Vce Saturation (Max) @ Ib, Ic :
- 300mV @ 10mA, 100mA
- Max Collector Current :
- 150mA
- Datasheets
- KSA1015GRTA
KSA1015GRTA Documents
PNP 150°C TJ 100nA ICBO 1 Elements 3 Terminations SILICON PNP TO-226-3, TO-92-3 (TO-226AA) (Formed Leads) Tape & Box (TB) Through Hole
KSA1015GRTA Overview
This device has a DC current gain of 200 @ 2mA 6V, which is the ratio between the base current and the collector current.This design offers maximum flexibility with a collector emitter saturation voltage of -300mV.A VCE saturation (Max) of 300mV @ 10mA, 100mA means Ic has reached its maximum value(saturated).A high level of efficiency can be achieved if the base voltage of the emitter remains at -5V.This device has a current rating of -150mA which corresponds to the maximum current it can carry for an indefinite period without deteriorating too much.As you can see, the part has a transition frequency of 80MHz.A breakdown input voltage of 50V volts can be used.A maximum collector current of 150mA volts is possible.
KSA1015GRTA Features
the DC current gain for this device is 200 @ 2mA 6V
a collector emitter saturation voltage of -300mV
the vce saturation(Max) is 300mV @ 10mA, 100mA
the emitter base voltage is kept at -5V
the current rating of this device is -150mA
a transition frequency of 80MHz
KSA1015GRTA Applications
There are a lot of ON Semiconductor
KSA1015GRTA applications of single BJT transistors.
- Inverter
- Interface
- Driver
- Muting
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