KSA1015GRTA
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- Mfr.Part #
- KSA1015GRTA
- Manufacturer
- Fairchild Semiconductor
- Package / Case
- TO-226-3, TO-92-3 (TO-226AA) (Formed Leads)
- Datasheet
- Download
- Description
- TRANS PNP 50V 0.15A TO92-3
- Stock
- 1
- In Stock ：
- 1
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- Manufacturer :
- Fairchild Semiconductor
- Product Category :
- Transistors - Bipolar (BJT) - Single
- Collector Emitter Voltage (VCEO) :
- 50V
- Current - Collector Cutoff (Max) :
- 100nA ICBO
- Base Part Number :
- KSA1015
- Collector Emitter Saturation Voltage :
- -300mV
- Operating Temperature :
- 150°C TJ
- REACH SVHC :
- No SVHC
- Mounting Type :
- Through Hole
- ECCN Code :
- EAR99
- Moisture Sensitivity Level (MSL) :
- 1 (Unlimited)
- Published :
- 2007
- Transition Frequency :
- 80MHz
- Pbfree Code :
- yes
- Height :
- 5.33mm
- Gain Bandwidth Product :
- 80MHz
- Package / Case :
- TO-226-3, TO-92-3 (TO-226AA) (Formed Leads)
- Max Breakdown Voltage :
- 50V
- Radiation Hardening :
- No
- Voltage - Rated DC :
- -50V
- Lifecycle Status :
- LIFETIME (Last Updated: 18 hours ago)
- Max Collector Current :
- 150mA
- Transistor Application :
- AMPLIFIER
- Number of Elements :
- 1
- Vce Saturation (Max) @ Ib, Ic :
- 300mV @ 10mA, 100mA
- Number of Pins :
- 3
- Factory Lead Time :
- 6 Weeks
- Number of Terminations :
- 3
- Width :
- 4.19mm
- Frequency :
- 80MHz
- Lead Free :
- Lead Free
- Transistor Element Material :
- SILICON
- Power Dissipation :
- 400mW
- Mount :
- Through Hole
- JESD-609 Code :
- e3
- Transistor Type :
- PNP
- hFE Min :
- 70
- Weight :
- 240mg
- Polarity/Channel Type :
- PNP
- Terminal Position :
- BOTTOM
- Emitter Base Voltage (VEBO) :
- -5V
- Current Rating :
- -150mA
- Max Power Dissipation :
- 400mW
- Collector Emitter Breakdown Voltage :
- 50V
- Terminal Finish :
- Tin (Sn)
- Collector Base Voltage (VCBO) :
- -50V
- RoHS Status :
- ROHS3 Compliant
- Packaging :
- Tape and Box (TB)
- Element Configuration :
- Single
- DC Current Gain (hFE) (Min) @ Ic, Vce :
- 200 @ 2mA 6V
- Length :
- 5.2mm
- Datasheets
- KSA1015GRTA
PNP 150°C TJ 100nA ICBO 1 Elements 3 Terminations SILICON PNP TO-226-3, TO-92-3 (TO-226AA) (Formed Leads) Tape & Box (TB) Through Hole
KSA1015GRTA Overview
This device has a DC current gain of 200 @ 2mA 6V, which is the ratio between the base current and the collector current.This design offers maximum flexibility with a collector emitter saturation voltage of -300mV.A VCE saturation (Max) of 300mV @ 10mA, 100mA means Ic has reached its maximum value(saturated).A high level of efficiency can be achieved if the base voltage of the emitter remains at -5V.This device has a current rating of -150mA which corresponds to the maximum current it can carry for an indefinite period without deteriorating too much.As you can see, the part has a transition frequency of 80MHz.A breakdown input voltage of 50V volts can be used.A maximum collector current of 150mA volts is possible.
KSA1015GRTA Features
the DC current gain for this device is 200 @ 2mA 6V
a collector emitter saturation voltage of -300mV
the vce saturation(Max) is 300mV @ 10mA, 100mA
the emitter base voltage is kept at -5V
the current rating of this device is -150mA
a transition frequency of 80MHz
KSA1015GRTA Applications
There are a lot of ON Semiconductor
KSA1015GRTA applications of single BJT transistors.
- Inverter
- Interface
- Driver
- Muting
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