KSA1013YTA
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- Mfr.Part #
- KSA1013YTA
- Manufacturer
- onsemi
- Package / Case
- TO-226-3, TO-92-3 Long Body (Formed Leads)
- Datasheet
- Download
- Description
- TRANS PNP 160V 1A TO92-3
- Stock
- 28,224
- In Stock ：
- 28,224
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- Manufacturer :
- onsemi
- Product Category :
- Transistors - Bipolar (BJT) - Single
- Collector Emitter Voltage (VCEO) :
- 160V
- ECCN Code :
- EAR99
- Transistor Application :
- AMPLIFIER
- Polarity/Channel Type :
- PNP
- Packaging :
- Tape and Box (TB)
- Operating Temperature :
- 150°C TJ
- Collector Emitter Saturation Voltage :
- -1.5V
- Max Power Dissipation :
- 900mW
- Lead Free :
- Lead Free
- Transistor Element Material :
- SILICON
- Vce Saturation (Max) @ Ib, Ic :
- 1.5V @ 50mA, 500mA
- Voltage - Rated DC :
- -160V
- Max Collector Current :
- 1A
- Collector Base Voltage (VCBO) :
- -160V
- Mounting Type :
- Through Hole
- Transistor Type :
- PNP
- RoHS Status :
- ROHS3 Compliant
- Gain Bandwidth Product :
- 50MHz
- Radiation Hardening :
- No
- Base Part Number :
- KSA1013
- hFE Min :
- 60
- Terminal Position :
- BOTTOM
- Mount :
- Through Hole
- Number of Pins :
- 3
- Factory Lead Time :
- 6 Weeks
- Weight :
- 371.1027mg
- Package / Case :
- TO-226-3, TO-92-3 Long Body (Formed Leads)
- DC Current Gain (hFE) (Min) @ Ic, Vce :
- 160 @ 200mA 5V
- Pbfree Code :
- yes
- Element Configuration :
- Single
- Number of Elements :
- 1
- Max Breakdown Voltage :
- 160V
- JESD-609 Code :
- e3
- Collector Emitter Breakdown Voltage :
- 160V
- Current - Collector Cutoff (Max) :
- 1μA ICBO
- Current Rating :
- -1A
- Terminal Finish :
- Tin (Sn)
- Transition Frequency :
- 50MHz
- Power Dissipation :
- 900mW
- Moisture Sensitivity Level (MSL) :
- 1 (Unlimited)
- Lifecycle Status :
- ACTIVE (Last Updated: 17 hours ago)
- REACH SVHC :
- No SVHC
- Number of Terminations :
- 3
- Frequency :
- 50MHz
- Published :
- 2013
- Emitter Base Voltage (VEBO) :
- -6V
- Length :
- 5.1mm
- Height :
- 8.2mm
- Width :
- 4.1mm
- Datasheets
- KSA1013YTA
PNP 150°C TJ 1μA ICBO 1 Elements 3 Terminations SILICON PNP TO-226-3, TO-92-3 Long Body (Formed Leads) Tape & Box (TB) Through Hole
KSA1013YTA Overview
This device has a DC current gain of 160 @ 200mA 5V, which is the ratio between the base current and the collector current.This design offers maximum flexibility with a collector emitter saturation voltage of -1.5V.A VCE saturation (Max) of 1.5V @ 50mA, 500mA means Ic has reached its maximum value(saturated).A high level of efficiency can be achieved if the base voltage of the emitter remains at -6V.This device has a current rating of -1A which corresponds to the maximum current it can carry for an indefinite period without deteriorating too much.As you can see, the part has a transition frequency of 50MHz.A breakdown input voltage of 160V volts can be used.A maximum collector current of 1A volts is possible.
KSA1013YTA Features
the DC current gain for this device is 160 @ 200mA 5V
a collector emitter saturation voltage of -1.5V
the vce saturation(Max) is 1.5V @ 50mA, 500mA
the emitter base voltage is kept at -6V
the current rating of this device is -1A
a transition frequency of 50MHz
KSA1013YTA Applications
There are a lot of ON Semiconductor
KSA1013YTA applications of single BJT transistors.
- Inverter
- Interface
- Driver
- Muting
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