KSA1013YTA
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- Mfr.Part #
- KSA1013YTA
- Manufacturer
- onsemi
- Package / Case
- TO-226-3, TO-92-3 Long Body (Formed Leads)
- Datasheet
- Download
- Description
- TRANS PNP 160V 1A TO92-3
- Stock
- 28,224
- In Stock ：
- 28,224
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- Manufacturer :
- onsemi
- Product Category :
- Transistors - Bipolar (BJT) - Single
- Max Power Dissipation :
- 900mW
- Moisture Sensitivity Level (MSL) :
- 1 (Unlimited)
- Mounting Type :
- Through Hole
- Number of Terminations :
- 3
- Max Breakdown Voltage :
- 160V
- Frequency :
- 50MHz
- Max Collector Current :
- 1A
- Emitter Base Voltage (VEBO) :
- -6V
- Transistor Type :
- PNP
- Terminal Finish :
- Tin (Sn)
- Vce Saturation (Max) @ Ib, Ic :
- 1.5V @ 50mA, 500mA
- Radiation Hardening :
- No
- Operating Temperature :
- 150°C TJ
- Current Rating :
- -1A
- Mount :
- Through Hole
- Weight :
- 371.1027mg
- Factory Lead Time :
- 6 Weeks
- Height :
- 8.2mm
- Polarity/Channel Type :
- PNP
- Power Dissipation :
- 900mW
- Package / Case :
- TO-226-3, TO-92-3 Long Body (Formed Leads)
- Collector Emitter Saturation Voltage :
- -1.5V
- Length :
- 5.1mm
- Collector Emitter Voltage (VCEO) :
- 160V
- Collector Base Voltage (VCBO) :
- -160V
- Terminal Position :
- BOTTOM
- Collector Emitter Breakdown Voltage :
- 160V
- Lifecycle Status :
- ACTIVE (Last Updated: 17 hours ago)
- Published :
- 2013
- Transistor Application :
- AMPLIFIER
- Element Configuration :
- Single
- Number of Pins :
- 3
- Base Part Number :
- KSA1013
- Transistor Element Material :
- SILICON
- REACH SVHC :
- No SVHC
- RoHS Status :
- ROHS3 Compliant
- Voltage - Rated DC :
- -160V
- hFE Min :
- 60
- DC Current Gain (hFE) (Min) @ Ic, Vce :
- 160 @ 200mA 5V
- Packaging :
- Tape and Box (TB)
- Width :
- 4.1mm
- ECCN Code :
- EAR99
- Lead Free :
- Lead Free
- Number of Elements :
- 1
- Pbfree Code :
- yes
- Gain Bandwidth Product :
- 50MHz
- Current - Collector Cutoff (Max) :
- 1μA ICBO
- Transition Frequency :
- 50MHz
- JESD-609 Code :
- e3
- Datasheets
- KSA1013YTA
PNP 150°C TJ 1μA ICBO 1 Elements 3 Terminations SILICON PNP TO-226-3, TO-92-3 Long Body (Formed Leads) Tape & Box (TB) Through Hole
KSA1013YTA Overview
This device has a DC current gain of 160 @ 200mA 5V, which is the ratio between the base current and the collector current.This design offers maximum flexibility with a collector emitter saturation voltage of -1.5V.A VCE saturation (Max) of 1.5V @ 50mA, 500mA means Ic has reached its maximum value(saturated).A high level of efficiency can be achieved if the base voltage of the emitter remains at -6V.This device has a current rating of -1A which corresponds to the maximum current it can carry for an indefinite period without deteriorating too much.As you can see, the part has a transition frequency of 50MHz.A breakdown input voltage of 160V volts can be used.A maximum collector current of 1A volts is possible.
KSA1013YTA Features
the DC current gain for this device is 160 @ 200mA 5V
a collector emitter saturation voltage of -1.5V
the vce saturation(Max) is 1.5V @ 50mA, 500mA
the emitter base voltage is kept at -6V
the current rating of this device is -1A
a transition frequency of 50MHz
KSA1013YTA Applications
There are a lot of ON Semiconductor
KSA1013YTA applications of single BJT transistors.
- Inverter
- Interface
- Driver
- Muting
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