KSA1010Y

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Mfr.Part #
KSA1010Y
Manufacturer
onsemi
Package / Case
TO-220-3
Datasheet
Download
Description
TRANS PNP 100V 7A TO220-3
Stock
37,336
In Stock :
37,336

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Manufacturer :
onsemi
Product Category :
Transistors - Bipolar (BJT) - Single
JESD-30 Code :
R-PSFM-T3
Transistor Application :
SWITCHING
Transistor Type :
PNP
Packaging :
Tube
Power Dissipation-Max (Abs) :
40W
Current - Collector (Ic) (Max) :
7A
Configuration :
Single
Base Part Number :
KSA1010
JEDEC-95 Code :
TO-220AB
Mounting Type :
Through Hole
Number of Terminations :
3
Surface Mount :
No
Polarity/Channel Type :
PNP
Number of Elements :
1
Power - Max :
1.5W
Reach Compliance Code :
Compliant
Current - Collector Cutoff (Max) :
10μA ICBO
Operating Temperature :
150°C TJ
Terminal Position :
Single
Fall Time-Max (tf) :
500ns
Package / Case :
TO-220-3
Vce Saturation (Max) @ Ib, Ic :
600mV @ 500mA, 5A
VCEsat-Max :
0.6 V
Transistor Element Material :
SILICON
Moisture Sensitivity Level (MSL) :
1 (Unlimited)
Turn Off Time-Max (toff) :
2000ns
Power Dissipation Ambient-Max :
1.5W
Voltage - Collector Emitter Breakdown (Max) :
100V
DC Current Gain (hFE) (Min) @ Ic, Vce :
100 @ 3A 5V
Turn On Time-Max (ton) :
500ns
Datasheets
KSA1010Y
Introducing Transistors - Bipolar (BJT) - Single onsemi KSA1010Y from Chip IC,where excellence meets affordability. This product stands out with its Base Part Number:KSA1010, Mounting Type:Through Hole, Number of Terminations:3, Operating Temperature:150°C TJ, Package / Case:TO-220-3, KSA1010Y pinout, KSA1010Y datasheet PDF, KSA1010Y amp .Beyond Transistors - Bipolar (BJT) - Single onsemi KSA1010Y ,we also offer BC817-40,235, BC817-40,215, BC807-40,215, Our vast inventory has you covered. Contact us now for immediate solutions.

onsemi KSA1010Y


PNP 150°C TJ 10μA ICBO 1 Elements 3 Terminations SILICON PNP TO-220-3 Tube Through Hole

KSA1010Y Overview


In this device, the DC current gain is 100 @ 3A 5V, which is calculated by taking the ratio of the base current to collector current and dividing transistor by two.Saturation of VCE means Ic is at its maximum value (saturated), and VCE saturation (Max) is 600mV @ 500mA, 5A.The device exhibits a collector-emitter breakdown at 100V.

KSA1010Y Features


the DC current gain for this device is 100 @ 3A 5V
the vce saturation(Max) is 600mV @ 500mA, 5A


KSA1010Y Applications


There are a lot of ON Semiconductor
KSA1010Y applications of single BJT transistors.


  • Inverter
  • Interface
  • Driver
  • Muting
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