KSA1013RTA
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- Mfr.Part #
- KSA1013RTA
- Manufacturer
- onsemi
- Package / Case
- TO-226-3, TO-92-3 Long Body (Formed Leads)
- Datasheet
- Download
- Description
- TRANS PNP 160V 1A TO92-3
- Stock
- 42,977
- In Stock ：
- 42,977
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- Manufacturer :
- onsemi
- Product Category :
- Transistors - Bipolar (BJT) - Single
- Moisture Sensitivity Level (MSL) :
- 1 (Unlimited)
- Mounting Type :
- Through Hole
- Package / Case :
- TO-226-3, TO-92-3 Long Body (Formed Leads)
- Current - Collector (Ic) (Max) :
- 1A
- Operating Temperature :
- 150°C TJ
- Packaging :
- Tape and Box (TB)
- Base Part Number :
- KSA1013
- Transistor Type :
- PNP
- Frequency - Transition :
- 50MHz
- Current - Collector Cutoff (Max) :
- 1μA ICBO
- Power - Max :
- 900mW
- DC Current Gain (hFE) (Min) @ Ic, Vce :
- 60 @ 200mA 5V
- Voltage - Collector Emitter Breakdown (Max) :
- 160V
- Vce Saturation (Max) @ Ib, Ic :
- 1.5V @ 50mA, 500mA
- Datasheets
- KSA1013RTA
PNP 150°C TJ 1μA ICBO TO-226-3, TO-92-3 Long Body (Formed Leads) Tape & Box (TB) Through Hole
KSA1013RTA Overview
The DC current gain is the ratio of the base current to the collector current βdc = Ic/Ib and the DC current gain for this device is 60 @ 200mA 5V.Vce saturation means Ic is at its maximum value(saturated), and the vce saturation(Max) is 1.5V @ 50mA, 500mA.A 160V maximal voltage - Collector Emitter Breakdown is present in the device.
KSA1013RTA Features
the DC current gain for this device is 60 @ 200mA 5V
the vce saturation(Max) is 1.5V @ 50mA, 500mA
KSA1013RTA Applications
There are a lot of ON Semiconductor
KSA1013RTA applications of single BJT transistors.
- Inverter
- Interface
- Driver
- Muting
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