KSA1010YTU

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Mfr.Part #
KSA1010YTU
Manufacturer
onsemi
Package / Case
TO-220-3
Datasheet
Download
Description
TRANS PNP 100V 7A TO220-3
Stock
1,034
In Stock :
1,034

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Manufacturer :
onsemi
Product Category :
Transistors - Bipolar (BJT) - Single
Packaging :
Tube
Transistor Type :
PNP
Current Rating :
-8A
DC Current Gain (hFE) (Min) @ Ic, Vce :
100 @ 3A 5V
Factory Lead Time :
6 Weeks
Voltage - Rated DC :
-100V
Mount :
Through Hole
Number of Terminations :
3
Number of Elements :
1
RoHS Status :
ROHS3 Compliant
Max Collector Current :
7A
Lead Free :
Lead Free
Height :
18.95mm
Element Configuration :
Single
Radiation Hardening :
No
Current - Collector Cutoff (Max) :
10μA ICBO
Lifecycle Status :
ACTIVE (Last Updated: 15 hours ago)
Width :
4.5mm
Collector Emitter Voltage (VCEO) :
100V
Polarity/Channel Type :
PNP
Length :
9.9mm
Mounting Type :
Through Hole
Pbfree Code :
yes
Moisture Sensitivity Level (MSL) :
1 (Unlimited)
Published :
2001
Transistor Element Material :
SILICON
Weight :
1.8g
Max Power Dissipation :
1.5W
Collector Emitter Saturation Voltage :
-600mV
ECCN Code :
EAR99
Operating Temperature :
150°C TJ
Collector Base Voltage (VCBO) :
-100V
Collector Emitter Breakdown Voltage :
100V
JEDEC-95 Code :
TO-220AB
hFE Min :
40
Number of Pins :
3
Vce Saturation (Max) @ Ib, Ic :
600mV @ 500mA, 5A
Emitter Base Voltage (VEBO) :
-7V
Transistor Application :
SWITCHING
Package / Case :
TO-220-3
Base Part Number :
KSA1010
Power Dissipation :
1.5W
Datasheets
KSA1010YTU
Introducing Transistors - Bipolar (BJT) - Single onsemi KSA1010YTU from Chip IC,where excellence meets affordability. This product stands out with its Number of Terminations:3, Mounting Type:Through Hole, Operating Temperature:150°C TJ, Number of Pins:3, Package / Case:TO-220-3, Base Part Number:KSA1010, KSA1010YTU pinout, KSA1010YTU datasheet PDF, KSA1010YTU amp .Beyond Transistors - Bipolar (BJT) - Single onsemi KSA1010YTU ,we also offer BC817-40,235, BC817-40,215, BC807-40,215, Our vast inventory has you covered. Contact us now for immediate solutions.

onsemi KSA1010YTU


PNP 150°C TJ 10μA ICBO 1 Elements 3 Terminations SILICON PNP TO-220-3 Tube Through Hole

KSA1010YTU Overview


As dc = Ic/Ib, DC current gain is the ratio of base current to collector current, and DC current gain for this device is 100 @ 3A 5V.The collector emitter saturation voltage is -600mV, which allows for maximum design flexibility.When VCE saturation is 600mV @ 500mA, 5A, transistor means Ic has reached transistors maximum value (saturated).Emitter base voltages of -7V can achieve high levels of efficiency.Fuse current ratings refer to how much current the fuse can carry for an indefinite period without deteriorating too much, and this device has a current rating of -8A.A maximum collector current of 7A volts can be achieved.

KSA1010YTU Features


the DC current gain for this device is 100 @ 3A 5V
a collector emitter saturation voltage of -600mV
the vce saturation(Max) is 600mV @ 500mA, 5A
the emitter base voltage is kept at -7V
the current rating of this device is -8A


KSA1010YTU Applications


There are a lot of ON Semiconductor
KSA1010YTU applications of single BJT transistors.


  • Inverter
  • Interface
  • Driver
  • Muting
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