KSA1013OBU
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- Mfr.Part #
- KSA1013OBU
- Manufacturer
- Fairchild Semiconductor
- Package / Case
- TO-226-3, TO-92-3 Long Body
- Datasheet
- Download
- Description
- TRANS PNP 160V 1A TO92-3
- Stock
- 1,871
- In Stock ：
- 1,871
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- Manufacturer :
- Fairchild Semiconductor
- Product Category :
- Transistors - Bipolar (BJT) - Single
- ECCN Code :
- EAR99
- Current - Collector Cutoff (Max) :
- 1μA ICBO
- Gain Bandwidth Product :
- 50MHz
- Lead Free :
- Lead Free
- Moisture Sensitivity Level (MSL) :
- 1 (Unlimited)
- Polarity/Channel Type :
- PNP
- hFE Min :
- 60
- Transistor Element Material :
- SILICON
- Number of Elements :
- 1
- Published :
- 2017
- Frequency :
- 50MHz
- Mount :
- Through Hole
- Number of Pins :
- 3
- Collector Emitter Voltage (VCEO) :
- 160V
- Collector Emitter Saturation Voltage :
- -1.5V
- Operating Temperature :
- 150°C TJ
- Element Configuration :
- Single
- Max Power Dissipation :
- 900mW
- Terminal Finish :
- Tin (Sn)
- Voltage - Rated DC :
- -160V
- Base Part Number :
- KSA1013
- Max Collector Current :
- 1A
- RoHS Status :
- ROHS3 Compliant
- Transition Frequency :
- 50MHz
- Number of Terminations :
- 3
- Current Rating :
- -1A
- Mounting Type :
- Through Hole
- Terminal Position :
- BOTTOM
- Transistor Application :
- AMPLIFIER
- Weight :
- 185mg
- Collector Base Voltage (VCBO) :
- -160V
- Collector Emitter Breakdown Voltage :
- 160V
- Lifecycle Status :
- LAST SHIPMENTS (Last Updated: 1 week ago)
- Transistor Type :
- PNP
- Factory Lead Time :
- 2 Weeks
- Power Dissipation :
- 900mW
- JESD-609 Code :
- e3
- Pbfree Code :
- yes
- Packaging :
- Bulk
- Package / Case :
- TO-226-3, TO-92-3 Long Body
- DC Current Gain (hFE) (Min) @ Ic, Vce :
- 100 @ 200mA 5V
- Emitter Base Voltage (VEBO) :
- -6V
- Vce Saturation (Max) @ Ib, Ic :
- 1.5V @ 50mA, 500mA
- Radiation Hardening :
- No
- Datasheets
- KSA1013OBU
KSA1013OBU Documents
PNP 150°C TJ 1μA ICBO 1 Elements 3 Terminations SILICON PNP TO-226-3, TO-92-3 Long Body Bulk Through Hole
KSA1013OBU Overview
As dc = Ic/Ib, DC current gain is the ratio of base current to collector current, and DC current gain for this device is 100 @ 200mA 5V.The collector emitter saturation voltage is -1.5V, which allows for maximum design flexibility.When VCE saturation is 1.5V @ 50mA, 500mA, transistor means Ic has reached transistors maximum value (saturated).Emitter base voltages of -6V can achieve high levels of efficiency.Fuse current ratings refer to how much current the fuse can carry for an indefinite period without deteriorating too much, and this device has a current rating of -1A.In the part, the transition frequency is 50MHz.A maximum collector current of 1A volts can be achieved.
KSA1013OBU Features
the DC current gain for this device is 100 @ 200mA 5V
a collector emitter saturation voltage of -1.5V
the vce saturation(Max) is 1.5V @ 50mA, 500mA
the emitter base voltage is kept at -6V
the current rating of this device is -1A
a transition frequency of 50MHz
KSA1013OBU Applications
There are a lot of ON Semiconductor
KSA1013OBU applications of single BJT transistors.
- Inverter
- Interface
- Driver
- Muting
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