IRFPS3815PBF

Manufacturer :

Infineon Technologies

Product Category :

Transistors - FETs, MOSFETs - Single

Length :

16.0782mm

Fall Time (Typ) :

60 ns

Continuous Drain Current (ID) :

105A

Current Rating :

105A

Gate Charge (Qg) (Max) @ Vgs :

390nC @ 10V

Number of Pins :

3

Rise Time :

130ns

ECCN Code :

EAR99

Vgs (Max) :

±30V

Current - Continuous Drain (Id) @ 25°C :

105A Tc

Published :

2004

Transistor Application :

SWITCHING

Package / Case :

TO-274AA

Power Dissipation :

441W

Number of Elements :

1

Gate to Source Voltage (Vgs) :

30V

Number of Terminations :

3

Packaging :

Bulk

Drain to Source Breakdown Voltage :

150V

Input Capacitance (Ciss) (Max) @ Vds :

6810pF @ 25V

Element Configuration :

Single

Turn-Off Delay Time :

51 ns

Voltage - Rated DC :

150V

FET Type :

N-Channel

Factory Lead Time :

25 Weeks

Case Connection :

DRAIN

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

Series :

HEXFET®

Lead Free :

Lead Free

Additional Feature :

AVALANCHE RATED, HIGH RELIABILITY

Width :

5.3mm

Mount :

Through Hole

Turn On Delay Time :

22 ns

Vgs(th) (Max) @ Id :

5V @ 250μA

RoHS Status :

ROHS3 Compliant

Radiation Hardening :

No

Drive Voltage (Max Rds On,Min Rds On) :

10V

Operating Mode :

ENHANCEMENT MODE

Power Dissipation-Max :

441W Tc

Rds On (Max) @ Id, Vgs :

15m Ω @ 63A, 10V

Transistor Element Material :

SILICON

Height :

20.8mm

Mounting Type :

Through Hole

Operating Temperature :

-55°C~175°C TJ