IRFPS3810

Manufacturer :

Infineon Technologies

Product Category :

Transistors - FETs, MOSFETs - Single

ECCN Code :

EAR99

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

Surface Mount :

No

Number of Terminations :

3

Transistor Element Material :

SILICON

Qualification Status :

Not Qualified

HTS Code :

8541.29.00.95

Configuration :

SINGLE WITH BUILT-IN DIODE

Avalanche Energy Rating (Eas) :

1350 mJ

Rds On (Max) @ Id, Vgs :

9m Ω @ 100A, 10V

Pulsed Drain Current-Max (IDM) :

670A

JESD-30 Code :

R-PSIP-T3

Drain to Source Voltage (Vdss) :

100V

RoHS Status :

Non-RoHS Compliant

Gate Charge (Qg) (Max) @ Vgs :

390nC @ 10V

Peak Reflow Temperature (Cel) :

NOT SPECIFIED

Series :

HEXFET®

DS Breakdown Voltage-Min :

100V

Number of Elements :

1

Drain-source On Resistance-Max :

0.009Ohm

Package / Case :

TO-274AA

Case Connection :

DRAIN

Current - Continuous Drain (Id) @ 25°C :

170A Tc

Terminal Position :

Single

Vgs (Max) :

±30V

Input Capacitance (Ciss) (Max) @ Vds :

6790pF @ 25V

Vgs(th) (Max) @ Id :

5V @ 250μA

Mounting Type :

Through Hole

Transistor Application :

SWITCHING

Power Dissipation-Max :

580W Tc

FET Type :

N-Channel

Drive Voltage (Max Rds On,Min Rds On) :

10V

Operating Temperature :

-55°C~175°C TJ

Additional Feature :

AVALANCHE RATED

Time@Peak Reflow Temperature-Max (s) :

NOT SPECIFIED

Operating Mode :

ENHANCEMENT MODE

Published :

2002

Drain Current-Max (Abs) (ID) :

105A

Packaging :

Bulk