IRFPG50PBF

Manufacturer :

Vishay

Product Category :

Transistors - FETs, MOSFETs - Single

Gate Charge (Qg) (Max) @ Vgs :

190nC @ 10V

Number of Elements :

1

RoHS Status :

ROHS3 Compliant

Resistance :

2Ohm

Published :

2011

Drain to Source Breakdown Voltage :

1kV

Min Operating Temperature :

-55°C

Lead Free :

Lead Free

Power Dissipation-Max :

190W Tc

Packaging :

Tube

Gate to Source Voltage (Vgs) :

20V

Power Dissipation :

190W

Recovery Time :

950 ns

Package / Case :

TO-247-3

Turn-Off Delay Time :

130 ns

Current Rating :

6.1A

Vgs(th) (Max) @ Id :

4V @ 250µA

Fall Time (Typ) :

36 ns

Length :

15.87mm

Weight :

38.000013g

Vgs (Max) :

±20V

Rds On Max :

2 Ω

Mount :

Through Hole

Drive Voltage (Max Rds On,Min Rds On) :

10V

Operating Temperature :

-55°C~150°C TJ

Factory Lead Time :

8 Weeks

Radiation Hardening :

No

Width :

5.31mm

Number of Channels :

1

Turn On Delay Time :

19 ns

Number of Pins :

3

Supplier Device Package :

TO-247-3

Rise Time :

35ns

Current - Continuous Drain (Id) @ 25°C :

6.1A Tc

Voltage - Rated DC :

1kV

Rds On (Max) @ Id, Vgs :

2Ohm @ 3.6A, 10V

Nominal Vgs :

4 V

Mounting Type :

Through Hole

Drain to Source Voltage (Vdss) :

1000V

REACH SVHC :

Unknown

Input Capacitance :

2.8nF

Height :

20.7mm

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

Element Configuration :

Single

Max Operating Temperature :

150°C

Drain to Source Resistance :

2Ohm

FET Type :

N-Channel

Threshold Voltage :

4V

Input Capacitance (Ciss) (Max) @ Vds :

2800pF @ 25V

Continuous Drain Current (ID) :

6.1A