IRFPG50
- Mfr.Part #
- IRFPG50
- Manufacturer
- Vishay
- Package / Case
- TO-247-3
- Datasheet
- Download
- Description
- MOSFET N-CH 1000V 6.1A TO247-3
- Stock
- 3,244
- In Stock :
- 3,244
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- Manufacturer :
- Vishay
- Product Category :
- Transistors - FETs, MOSFETs - Single
- Drive Voltage (Max Rds On,Min Rds On) :
- 10V
- Drain to Source Voltage (Vdss) :
- 1000V
- Moisture Sensitivity Level (MSL) :
- 1 (Unlimited)
- Length :
- 15.87mm
- Element Configuration :
- Single
- RoHS Status :
- Non-RoHS Compliant
- Gate Charge (Qg) (Max) @ Vgs :
- 190nC @ 10V
- FET Type :
- N-Channel
- Turn On Delay Time :
- 19 ns
- Vgs (Max) :
- ±20V
- Height :
- 20.7mm
- Rds On Max :
- 2 Ω
- Fall Time (Typ) :
- 36 ns
- Power Dissipation :
- 190W
- Rise Time :
- 35ns
- Voltage - Rated DC :
- 1kV
- Radiation Hardening :
- No
- Max Operating Temperature :
- 150°C
- Lead Free :
- Contains Lead
- Drain to Source Breakdown Voltage :
- 1kV
- Mount :
- Through Hole
- Turn-Off Delay Time :
- 130 ns
- Input Capacitance :
- 2.8nF
- Package / Case :
- TO-247-3
- Packaging :
- Tube
- Gate to Source Voltage (Vgs) :
- 20V
- Rds On (Max) @ Id, Vgs :
- 2Ohm @ 3.6A, 10V
- Number of Channels :
- 1
- Current - Continuous Drain (Id) @ 25°C :
- 6.1A Tc
- Continuous Drain Current (ID) :
- 6.1A
- Published :
- 2017
- Min Operating Temperature :
- -55°C
- Vgs(th) (Max) @ Id :
- 4V @ 250µA
- Input Capacitance (Ciss) (Max) @ Vds :
- 2800pF @ 25V
- Power Dissipation-Max :
- 190W Tc
- Drain to Source Resistance :
- 2Ohm
- Mounting Type :
- Through Hole
- Supplier Device Package :
- TO-247-3
- Number of Elements :
- 1
- Weight :
- 38.000013g
- Number of Pins :
- 3
- Operating Temperature :
- -55°C~150°C TJ
- Current Rating :
- 6.1A
- Width :
- 5.31mm
- Datasheets
- IRFPG50

N-Channel Tube 2Ohm @ 3.6A, 10V ±20V 2800pF @ 25V 190nC @ 10V 1000V TO-247-3
IRFPG50 Overview
With either input grounded, the input capacitance parameter, CI, represents the capacitance between the input terminals of the op amp. This device has a maximum input capacitance of 2800pF @ 25V.A device's drain current is its maximum continuous current, and this device has a continuous drain current (ID) of 6.1A.With a drain-source breakdown voltage of 1kV and a drain-source current flow rate of 1, this device has a drain-source breakdown voltage of 1kV.The turn-off delay time is the amount of time it takes to charge the input capacitance of the device before drain current conduction can begin, and it is 130 ns.When a specific gate-to-source voltage (VGS) is applied to bias a MOSFET into the on state, a drain-to-source resistance of 2Ohm exists between the drain and source.Input capacitance charging takes time before drain current conduction begins, so the turn-on delay time is 19 ns.Single MOSFETs transistor is the voltage that falls across the gate-source terminal of a FET transistor that is called the gate-source voltage, VGS.Single MOSFETs transistor is necessary to have a drain to source voltage (Vdss) of 1000V.Using drive voltage (10V) reduces this device's overall power consumption.
IRFPG50 Features
a continuous drain current (ID) of 6.1A
a drain-to-source breakdown voltage of 1kV voltage
the turn-off delay time is 130 ns
single MOSFETs transistor is 2Ohm
a 1000V drain to source voltage (Vdss)
IRFPG50 Applications
There are a lot of Vishay Siliconix
IRFPG50 applications of single MOSFETs transistors.
- Lighting
- Uninterruptible Power Supply
- AC-DC Power Supply
- Synchronous Rectification for ATX 1 Server I Telecom PSU
- Motor drives and Uninterruptible Power Supplies
- Micro Solar Inverter
- DC/DC converters
- Power Tools
- Motor Drives and Uninterruptible Power Supples
- Synchronous Rectification
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