IRFPF50

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Mfr.Part #
IRFPF50
Manufacturer
Vishay
Package / Case
TO-247-3
Datasheet
Download
Description
MOSFET N-CH 900V 6.7A TO247-3
Stock
1,543
In Stock :
1,543

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Manufacturer :
Vishay
Product Category :
Transistors - FETs, MOSFETs - Single
Height :
20.7mm
Packaging :
Tube
Rise Time :
34ns
Drain to Source Resistance :
1.6Ohm
Element Configuration :
Single
Length :
15.87mm
Vgs (Max) :
±20V
Package / Case :
TO-247-3
Max Operating Temperature :
150°C
Supplier Device Package :
TO-247-3
Mounting Type :
Through Hole
Mount :
Through Hole
Input Capacitance :
2.9nF
Continuous Drain Current (ID) :
6.7A
Turn On Delay Time :
20 ns
Vgs(th) (Max) @ Id :
4V @ 250µA
FET Type :
N-Channel
Rds On (Max) @ Id, Vgs :
1.6Ohm @ 4A, 10V
Weight :
38.000013g
Input Capacitance (Ciss) (Max) @ Vds :
2900pF @ 25V
Fall Time (Typ) :
37 ns
Width :
5.31mm
Power Dissipation-Max :
190W Tc
Gate to Source Voltage (Vgs) :
20V
Number of Pins :
3
Factory Lead Time :
6 Weeks
Gate Charge (Qg) (Max) @ Vgs :
200nC @ 10V
Moisture Sensitivity Level (MSL) :
1 (Unlimited)
Min Operating Temperature :
-55°C
Drive Voltage (Max Rds On,Min Rds On) :
10V
Published :
2016
RoHS Status :
Non-RoHS Compliant
Number of Channels :
1
Drain to Source Voltage (Vdss) :
900V
Operating Temperature :
-55°C~150°C TJ
Turn-Off Delay Time :
130 ns
Rds On Max :
1.6 Ω
Current - Continuous Drain (Id) @ 25°C :
6.7A Tc
Datasheets
IRFPF50
Introducing Transistors - FETs, MOSFETs - Single Vishay IRFPF50 from Chip IC,where excellence meets affordability. This product stands out with its Package / Case:TO-247-3, Mounting Type:Through Hole, Number of Pins:3, Number of Channels:1, Operating Temperature:-55°C~150°C TJ, IRFPF50 pinout, IRFPF50 datasheet PDF, IRFPF50 amp .Beyond Transistors - FETs, MOSFETs - Single Vishay IRFPF50 ,we also offer EPC2019, EPC2053, EPC2015C, Our vast inventory has you covered. Contact us now for immediate solutions.

Vishay IRFPF50


N-Channel Tube 1.6Ohm @ 4A, 10V ±20V 2900pF @ 25V 200nC @ 10V 900V TO-247-3

IRFPF50 Overview


A device's maximal input capacitance is 2900pF @ 25V, which is defined as the capacitance between its input terminals with either input grounded.This device's continuous drain current (ID) is 6.7A, which represents the maximum continuous current it can conduct.Its turn-off delay time is 130 ns, which is the time to charge the device's input capacitance before drain current conduction begins.When a gate-to-source voltage (VGS) is applied to bias a MOSFET to the on state, the resistance between the drain and the source of the device is 1.6Ohm.Input capacitance charging takes time before drain current conduction begins, so the turn-on delay time is 20 ns.Gate-source voltage, or VGS, is the voltage across a FET transistor's gate-source terminal, and can be 20V volts.This transistor requires a 900V drain to source voltage (Vdss).This device reduces its overall power consumption by using drive voltage (10V).

IRFPF50 Features


a continuous drain current (ID) of 6.7A
the turn-off delay time is 130 ns
single MOSFETs transistor is 1.6Ohm
a 900V drain to source voltage (Vdss)


IRFPF50 Applications


There are a lot of Vishay Siliconix
IRFPF50 applications of single MOSFETs transistors.


  • Consumer Appliances
  • Lighting
  • Uninterruptible Power Supply
  • AC-DC Power Supply
  • Synchronous Rectification for ATX 1 Server I Telecom PSU
  • Motor drives and Uninterruptible Power Supplies
  • Micro Solar Inverter
  • DC/DC converters
  • Power Tools
  • Motor Drives and Uninterruptible Power Supples
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