IRFPE50PBF

Manufacturer :

Vishay

Product Category :

Transistors - FETs, MOSFETs - Single

Weight :

38.000013g

Number of Pins :

3

Power Dissipation-Max :

190W Tc

Resistance :

1.2Ohm

Nominal Vgs :

4 V

Mounting Type :

Through Hole

REACH SVHC :

Unknown

Dual Supply Voltage :

800V

Rise Time :

38ns

Number of Channels :

1

Gate to Source Voltage (Vgs) :

20V

Drain to Source Breakdown Voltage :

800V

Vgs(th) (Max) @ Id :

4V @ 250µA

Mount :

Through Hole

Lead Pitch :

5.45mm

Operating Temperature :

-55°C~150°C TJ

Length :

15.87mm

Package / Case :

TO-247-3

Radiation Hardening :

No

Min Operating Temperature :

-55°C

Width :

5.31mm

Current Rating :

7.8A

Rds On (Max) @ Id, Vgs :

1.2Ohm @ 4.7A, 10V

FET Type :

N-Channel

Drive Voltage (Max Rds On,Min Rds On) :

10V

Recovery Time :

980 ns

Rds On Max :

1.2 Ω

Drain to Source Voltage (Vdss) :

800V

Drain to Source Resistance :

1.2Ohm

Input Capacitance :

3.1nF

Turn On Delay Time :

19 ns

Fall Time (Typ) :

39 ns

Turn-Off Delay Time :

120 ns

Voltage - Rated DC :

800V

Current - Continuous Drain (Id) @ 25°C :

7.8A Tc

Supplier Device Package :

TO-247-3

Termination :

Through Hole

Vgs (Max) :

±20V

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

Gate Charge (Qg) (Max) @ Vgs :

200nC @ 10V

Input Capacitance (Ciss) (Max) @ Vds :

3100pF @ 25V

Max Operating Temperature :

150°C

RoHS Status :

ROHS3 Compliant

Number of Elements :

1

Packaging :

Tube

Height :

20.7mm

Power Dissipation :

190W

Continuous Drain Current (ID) :

7.8A

Lead Free :

Lead Free

Element Configuration :

Single

Published :

2008

Factory Lead Time :

8 Weeks

Threshold Voltage :

4V