IRFPE40PBF
- Mfr.Part #
- IRFPE40PBF
- Manufacturer
- Vishay
- Package / Case
- TO-247-3
- Datasheet
- Download
- Description
- MOSFET N-CH 800V 5.4A TO247-3
- Stock
- 19,036
- In Stock :
- 19,036
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- Manufacturer :
- Vishay
- Product Category :
- Transistors - FETs, MOSFETs - Single
- Resistance :
- 2Ohm
- Vgs (Max) :
- ±20V
- Mounting Type :
- Through Hole
- Additional Feature :
- AVALANCHE RATED
- Element Configuration :
- Single
- Number of Terminations :
- 3
- Current Rating :
- 5.4A
- Turn-Off Delay Time :
- 100 ns
- Radiation Hardening :
- No
- Transistor Element Material :
- SILICON
- Terminal Finish :
- Matte Tin (Sn)
- Operating Temperature :
- -55°C~150°C TJ
- Power Dissipation :
- 150W
- Lead Free :
- Lead Free
- Packaging :
- Tube
- Rds On (Max) @ Id, Vgs :
- 2 Ω @ 3.2A, 10V
- Rise Time :
- 36ns
- Number of Channels :
- 1
- Package / Case :
- TO-247-3
- FET Type :
- N-Channel
- Length :
- 15.87mm
- Pbfree Code :
- yes
- Vgs(th) (Max) @ Id :
- 4V @ 250µA
- Drain to Source Breakdown Voltage :
- 800V
- JEDEC-95 Code :
- TO-247AC
- Recovery Time :
- 830 ns
- RoHS Status :
- ROHS3 Compliant
- Current - Continuous Drain (Id) @ 25°C :
- 5.4A Tc
- Moisture Sensitivity Level (MSL) :
- 1 (Unlimited)
- Gate to Source Voltage (Vgs) :
- 20V
- Time@Peak Reflow Temperature-Max (s) :
- 40
- Factory Lead Time :
- 8 Weeks
- Weight :
- 38.000013g
- Case Connection :
- DRAIN
- Gate Charge (Qg) (Max) @ Vgs :
- 130nC @ 10V
- Voltage - Rated DC :
- 800V
- Continuous Drain Current (ID) :
- 5.4A
- Height :
- 20.7mm
- Number of Elements :
- 1
- Mount :
- Through Hole
- JESD-609 Code :
- e3
- Number of Pins :
- 3
- Nominal Vgs :
- 4 V
- Drive Voltage (Max Rds On,Min Rds On) :
- 10V
- Pulsed Drain Current-Max (IDM) :
- 22A
- Peak Reflow Temperature (Cel) :
- 260
- Operating Mode :
- ENHANCEMENT MODE
- Power Dissipation-Max :
- 150W Tc
- Transistor Application :
- SWITCHING
- Fall Time (Typ) :
- 32 ns
- Avalanche Energy Rating (Eas) :
- 490 mJ
- Pin Count :
- 3
- Input Capacitance (Ciss) (Max) @ Vds :
- 1900pF @ 25V
- Turn On Delay Time :
- 16 ns
- Width :
- 5.31mm
- Datasheets
- IRFPE40PBF

N-Channel Tube 2 Ω @ 3.2A, 10V ±20V 1900pF @ 25V 130nC @ 10V TO-247-3
IRFPE40PBF Overview
In this case, the MOSFET is susceptible to avalanche breakdown, applied energy is termed avalanche energy, and the avalanche energy rating (Eas) for the MOSFET is 490 mJ.As an op amp's input capacitance parameter, CI, is defined as the capacitance between the input terminals when one input is grounded, this device's maximum input capacitance is 1900pF @ 25V.This device conducts a continuous drain current (ID) of 5.4A, which is the maximum continuous current transistor can conduct.Using VGS=800V and a specified value of ID, the drain-source breakdown voltage is VDS at which a specified value of ID flows. This device has a drain-source breakdown voltage of 800V (that is, no charge flow from drain to source).When the device is turned off, a turn-off delay time of 100 ns occurs as the input capacitance charges before drain current conduction commences.Pulsed drain current is maximum rated peak drain current 22A.Before drain current conduction can begin, the device's turning-on delay time takes time to charge its input capacitance. This delay time is 16 ns.Voltage at the gate-source terminal of a FET transistor, called the gate-source voltage, or VGS, can be 20V.In order to reduce power consumption, this device uses a drive voltage of 10V volts (10V).
IRFPE40PBF Features
the avalanche energy rating (Eas) is 490 mJ
a continuous drain current (ID) of 5.4A
a drain-to-source breakdown voltage of 800V voltage
the turn-off delay time is 100 ns
based on its rated peak drain current 22A.
IRFPE40PBF Applications
There are a lot of Vishay Siliconix
IRFPE40PBF applications of single MOSFETs transistors.
- Motor drives and Uninterruptible Power Supplies
- Micro Solar Inverter
- DC/DC converters
- Power Tools
- Motor Drives and Uninterruptible Power Supples
- Synchronous Rectification
- Battery Protection Circuit
- Telecom 1 Sever Power Supplies
- Industrial Power Supplies
- PFC stages, hard switching PWM stages and resonant switching
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