IRFPE30

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Mfr.Part #
IRFPE30
Manufacturer
Vishay
Package / Case
TO-247-3
Datasheet
Download
Description
MOSFET N-CH 800V 4.1A TO247-3
Stock
35,373
In Stock :
35,373

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Manufacturer :
Vishay
Product Category :
Transistors - FETs, MOSFETs - Single
Rise Time :
33ns
Operating Temperature :
-55°C~150°C TJ
FET Type :
N-Channel
Package / Case :
TO-247-3
Vgs(th) (Max) @ Id :
4V @ 250µA
Number of Channels :
1
Rds On (Max) @ Id, Vgs :
3Ohm @ 2.5A, 10V
Drain to Source Voltage (Vdss) :
800V
Height :
20.7mm
Width :
5.31mm
Input Capacitance :
1.3nF
Current - Continuous Drain (Id) @ 25°C :
4.1A Tc
Continuous Drain Current (ID) :
4.1A
Fall Time (Typ) :
30 ns
Turn-Off Delay Time :
82 ns
Current Rating :
4.1A
Power Dissipation-Max :
125W Tc
Max Operating Temperature :
150°C
Turn On Delay Time :
12 ns
Voltage - Rated DC :
800V
Published :
2017
Mounting Type :
Through Hole
Supplier Device Package :
TO-247-3
Gate to Source Voltage (Vgs) :
20V
Input Capacitance (Ciss) (Max) @ Vds :
1300pF @ 25V
Length :
15.87mm
Drive Voltage (Max Rds On,Min Rds On) :
10V
Weight :
38.000013g
Lead Free :
Contains Lead
Packaging :
Tube
Gate Charge (Qg) (Max) @ Vgs :
78nC @ 10V
Element Configuration :
Single
Vgs (Max) :
±20V
Min Operating Temperature :
-55°C
Mount :
Through Hole
RoHS Status :
Non-RoHS Compliant
Rds On Max :
3 Ω
Number of Pins :
3
Moisture Sensitivity Level (MSL) :
1 (Unlimited)
Drain to Source Resistance :
3Ohm
Datasheets
IRFPE30
Introducing Transistors - FETs, MOSFETs - Single Vishay IRFPE30 from Chip IC,where excellence meets affordability. This product stands out with its Operating Temperature:-55°C~150°C TJ, Package / Case:TO-247-3, Number of Channels:1, Mounting Type:Through Hole, Number of Pins:3, IRFPE30 pinout, IRFPE30 datasheet PDF, IRFPE30 amp .Beyond Transistors - FETs, MOSFETs - Single Vishay IRFPE30 ,we also offer EPC2019, EPC2053, EPC2015C, Our vast inventory has you covered. Contact us now for immediate solutions.

Vishay IRFPE30


N-Channel Tube 3Ohm @ 2.5A, 10V ±20V 1300pF @ 25V 78nC @ 10V 800V TO-247-3

IRFPE30 Overview


An op amp's input capacitance is defined as the capacitance between both of its input terminals with either input grounded, and 1300pF @ 25V is its maximum input capacitance.The drain current is the maximum continuous current the device can conduct, and this device has 4.1A continuous drain current (ID).Input capacitance must be charged before drain current conduction can begin, so the turn-off delay time is 82 ns.This device has a drain-to-source resistance of 3Ohm when a gate-to-source voltage (VGS) is applied to bias it into the on state, and when this voltage is applied to bias it into the on state.Before drain current conduction begins, the device's input capacitance must be charged, so the delay time is 12 ns.An FET transistor's gate-source voltage, VGS, indicates how much voltage is applied across the transistor's gate-source terminal and it can range from 20V to 1.For this transistor to work, a voltage 800V is required between drain and source (Vdss).Using drive voltage (10V), this device contributes to a reduction in overall power consumption.

IRFPE30 Features


a continuous drain current (ID) of 4.1A
the turn-off delay time is 82 ns
single MOSFETs transistor is 3Ohm
a 800V drain to source voltage (Vdss)


IRFPE30 Applications


There are a lot of Vishay Siliconix
IRFPE30 applications of single MOSFETs transistors.


  • AC-DC Power Supply
  • Synchronous Rectification for ATX 1 Server I Telecom PSU
  • Motor drives and Uninterruptible Power Supplies
  • Micro Solar Inverter
  • DC/DC converters
  • Power Tools
  • Motor Drives and Uninterruptible Power Supples
  • Synchronous Rectification
  • Battery Protection Circuit
  • Telecom 1 Sever Power Supplies
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