IRFP7718PBF

Manufacturer :

Infineon Technologies

Product Category :

Transistors - FETs, MOSFETs - Single

RoHS Status :

ROHS3 Compliant

Number of Pins :

3

Transistor Element Material :

SILICON

Drive Voltage (Max Rds On,Min Rds On) :

6V 10V

Height :

20.7mm

Package / Case :

TO-247-3

Current - Continuous Drain (Id) @ 25°C :

195A Tc

Vgs(th) (Max) @ Id :

3.7V @ 250μA

Series :

HEXFET®, StrongIRFET™

Rds On (Max) @ Id, Vgs :

1.8m Ω @ 100A, 10V

Element Configuration :

Single

Number of Elements :

1

ECCN Code :

EAR99

Fall Time (Typ) :

160 ns

FET Type :

N-Channel

Turn-Off Delay Time :

266 ns

Rise Time :

164ns

DS Breakdown Voltage-Min :

75V

Lead Free :

Lead Free

Turn On Delay Time :

58 ns

Mounting Type :

Through Hole

Drain to Source Voltage (Vdss) :

75V

Factory Lead Time :

12 Weeks

Packaging :

Tube

Input Capacitance (Ciss) (Max) @ Vds :

29550pF @ 25V

Operating Mode :

ENHANCEMENT MODE

Gate to Source Voltage (Vgs) :

20V

Number of Terminations :

3

Transistor Application :

SWITCHING

REACH SVHC :

No SVHC

Gate Charge (Qg) (Max) @ Vgs :

830nC @ 10V

Width :

5.31mm

Published :

2013

Operating Temperature :

-55°C~175°C TJ

Number of Channels :

1

Peak Reflow Temperature (Cel) :

NOT SPECIFIED

Avalanche Energy Rating (Eas) :

2004 mJ

Mount :

Through Hole

Case Connection :

DRAIN

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

JEDEC-95 Code :

TO-247AC

Continuous Drain Current (ID) :

195A

Time@Peak Reflow Temperature-Max (s) :

NOT SPECIFIED

Power Dissipation :

517W

Power Dissipation-Max :

517W Tc

Length :

15.87mm

Vgs (Max) :

±20V