IRFP7430PBF

Manufacturer :

Infineon Technologies

Product Category :

Transistors - FETs, MOSFETs - Single

Rds On (Max) @ Id, Vgs :

1.3m Ω @ 100A, 10V

Lead Free :

Lead Free

Drain to Source Breakdown Voltage :

40V

RoHS Status :

ROHS3 Compliant

Vgs (Max) :

±20V

Length :

15.87mm

Published :

2010

Gate Charge (Qg) (Max) @ Vgs :

460nC @ 10V

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

Rise Time :

105ns

Vgs(th) (Max) @ Id :

3.9V @ 250μA

Current - Continuous Drain (Id) @ 25°C :

195A Tc

FET Type :

N-Channel

Power Dissipation-Max :

366W Tc

Operating Mode :

ENHANCEMENT MODE

Radiation Hardening :

No

Case Connection :

DRAIN

Factory Lead Time :

12 Weeks

Element Configuration :

Single

Avalanche Energy Rating (Eas) :

722 mJ

REACH SVHC :

No SVHC

Number of Pins :

3

Operating Temperature :

-55°C~175°C TJ

Height :

20.7mm

Threshold Voltage :

2.2V

Gate to Source Voltage (Vgs) :

20V

Mounting Type :

Through Hole

Turn On Delay Time :

32 ns

Recovery Time :

52 ns

Power Dissipation :

366W

Series :

HEXFET®, StrongIRFET™

Packaging :

Tube

ECCN Code :

EAR99

Resistance :

1.3MOhm

Mount :

Through Hole

Fall Time (Typ) :

100 ns

Package / Case :

TO-247-3

Continuous Drain Current (ID) :

195A

JEDEC-95 Code :

TO-247AC

Width :

5.31mm

Drive Voltage (Max Rds On,Min Rds On) :

6V 10V

Turn-Off Delay Time :

160 ns

Input Capacitance (Ciss) (Max) @ Vds :

14240pF @ 25V

Transistor Application :

SWITCHING

Transistor Element Material :

SILICON

Number of Elements :

1

Number of Terminations :

3