IRFP4868PBF

Manufacturer :

Infineon Technologies

Product Category :

Transistors - FETs, MOSFETs - Single

Turn-Off Delay Time :

62 ns

Element Configuration :

Single

Transistor Application :

SWITCHING

Mounting Type :

Through Hole

Drive Voltage (Max Rds On,Min Rds On) :

10V

Operating Mode :

ENHANCEMENT MODE

Case Connection :

DRAIN

Published :

2012

Input Capacitance (Ciss) (Max) @ Vds :

10774pF @ 50V

Drain to Source Breakdown Voltage :

300V

Packaging :

Tube

Height :

24.99mm

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

Power Dissipation :

517W

Max Junction Temperature (Tj) :

175°C

Radiation Hardening :

No

Mount :

Through Hole

Number of Elements :

1

Lead Free :

Lead Free

Package / Case :

TO-247-3

Pulsed Drain Current-Max (IDM) :

280A

Fall Time (Typ) :

45 ns

Number of Pins :

3

JEDEC-95 Code :

TO-247AC

Width :

5.31mm

Current - Continuous Drain (Id) @ 25°C :

70A Tc

ECCN Code :

EAR99

Transistor Element Material :

SILICON

REACH SVHC :

No SVHC

Rds On (Max) @ Id, Vgs :

32m Ω @ 42A, 10V

Threshold Voltage :

3V

Length :

15.87mm

FET Type :

N-Channel

Vgs(th) (Max) @ Id :

5V @ 250μA

Number of Terminations :

3

Gate to Source Voltage (Vgs) :

20V

Turn On Delay Time :

24 ns

Power Dissipation-Max :

517W Tc

Operating Temperature :

-55°C~175°C TJ

Gate Charge (Qg) (Max) @ Vgs :

270nC @ 10V

Number of Channels :

1

Resistance :

32mOhm

Rise Time :

16ns

Vgs (Max) :

±20V

Recovery Time :

351 ns

Factory Lead Time :

12 Weeks

RoHS Status :

ROHS3 Compliant

Continuous Drain Current (ID) :

70A