IRFP4868PBF

Manufacturer :

Infineon Technologies

Product Category :

Transistors - FETs, MOSFETs - Single

Factory Lead Time :

12 Weeks

Rds On (Max) @ Id, Vgs :

32m Ω @ 42A, 10V

Max Junction Temperature (Tj) :

175°C

Drive Voltage (Max Rds On,Min Rds On) :

10V

Rise Time :

16ns

Operating Mode :

ENHANCEMENT MODE

Height :

24.99mm

Number of Channels :

1

Turn-Off Delay Time :

62 ns

Width :

5.31mm

Number of Elements :

1

Fall Time (Typ) :

45 ns

Number of Terminations :

3

Package / Case :

TO-247-3

Lead Free :

Lead Free

Power Dissipation-Max :

517W Tc

Recovery Time :

351 ns

Vgs(th) (Max) @ Id :

5V @ 250μA

Transistor Application :

SWITCHING

Drain to Source Breakdown Voltage :

300V

Gate Charge (Qg) (Max) @ Vgs :

270nC @ 10V

Pulsed Drain Current-Max (IDM) :

280A

Published :

2012

Radiation Hardening :

No

JEDEC-95 Code :

TO-247AC

Turn On Delay Time :

24 ns

RoHS Status :

ROHS3 Compliant

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

Mount :

Through Hole

REACH SVHC :

No SVHC

Power Dissipation :

517W

Resistance :

32mOhm

Packaging :

Tube

ECCN Code :

EAR99

FET Type :

N-Channel

Current - Continuous Drain (Id) @ 25°C :

70A Tc

Element Configuration :

Single

Vgs (Max) :

±20V

Length :

15.87mm

Input Capacitance (Ciss) (Max) @ Vds :

10774pF @ 50V

Operating Temperature :

-55°C~175°C TJ

Transistor Element Material :

SILICON

Number of Pins :

3

Continuous Drain Current (ID) :

70A

Case Connection :

DRAIN

Mounting Type :

Through Hole

Threshold Voltage :

3V

Gate to Source Voltage (Vgs) :

20V