IRFP4710PBF

Manufacturer :

Infineon Technologies

Product Category :

Transistors - FETs, MOSFETs - Single

Turn-Off Delay Time :

41 ns

Gate to Source Voltage (Vgs) :

20V

Length :

15.875mm

Element Configuration :

Single

REACH SVHC :

No SVHC

Mount :

Through Hole

Dual Supply Voltage :

100V

Drive Voltage (Max Rds On,Min Rds On) :

10V

Continuous Drain Current (ID) :

72A

Turn On Delay Time :

35 ns

ECCN Code :

EAR99

Packaging :

Tube

Power Dissipation-Max :

190W Tc

Mounting Type :

Through Hole

Drain to Source Breakdown Voltage :

100V

Height :

20.2946mm

RoHS Status :

ROHS3 Compliant

Vgs(th) (Max) @ Id :

5.5V @ 250µA

Current - Continuous Drain (Id) @ 25°C :

72A Tc

Number of Elements :

1

Number of Terminations :

3

Nominal Vgs :

5.5 V

Resistance :

14Ohm

Package / Case :

TO-247-3

Radiation Hardening :

No

Published :

2002

Input Capacitance (Ciss) (Max) @ Vds :

6160pF @ 25V

Number of Pins :

3

Transistor Element Material :

SILICON

Width :

5.3mm

Gate Charge (Qg) (Max) @ Vgs :

170nC @ 10V

Threshold Voltage :

5.5V

Fall Time (Typ) :

38 ns

Power Dissipation :

190W

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

Factory Lead Time :

12 Weeks

Voltage - Rated DC :

100V

Series :

HEXFET®

Vgs (Max) :

±20V

Rds On (Max) @ Id, Vgs :

14m Ω @ 45A, 10V

Lead Free :

Lead Free

Operating Temperature :

-55°C~175°C TJ

Transistor Application :

SWITCHING

Current Rating :

72A

Rise Time :

130ns

FET Type :

N-Channel

Recovery Time :

110 ns

Case Connection :

DRAIN

Operating Mode :

ENHANCEMENT MODE

JEDEC-95 Code :

TO-247AC