IRFP4668PBF

Manufacturer :

Infineon Technologies

Product Category :

Transistors - FETs, MOSFETs - Single

Published :

2008

Input Capacitance (Ciss) (Max) @ Vds :

10720pF @ 50V

Mounting Type :

Through Hole

JEDEC-95 Code :

TO-247AC

Height :

24.99mm

Lead Free :

Lead Free

Turn On Delay Time :

41 ns

Max Junction Temperature (Tj) :

175°C

Drain to Source Breakdown Voltage :

200V

Drive Voltage (Max Rds On,Min Rds On) :

10V

Resistance :

9.7mOhm

Width :

5.3086mm

Transistor Element Material :

SILICON

Rise Time :

105ns

Power Dissipation :

520W

Case Connection :

DRAIN

Number of Channels :

1

Packaging :

Tube

Termination :

Through Hole

Element Configuration :

Single

Transistor Application :

SWITCHING

ECCN Code :

EAR99

Factory Lead Time :

12 Weeks

Series :

HEXFET®

Continuous Drain Current (ID) :

130A

Mount :

Through Hole

Gate Charge (Qg) (Max) @ Vgs :

241nC @ 10V

Fall Time (Typ) :

74 ns

Current - Continuous Drain (Id) @ 25°C :

130A Tc

Operating Mode :

ENHANCEMENT MODE

Dual Supply Voltage :

200V

Number of Elements :

1

RoHS Status :

ROHS3 Compliant

Time@Peak Reflow Temperature-Max (s) :

30

Number of Terminations :

3

Power Dissipation-Max :

520W Tc

Pulsed Drain Current-Max (IDM) :

520A

Number of Pins :

3

Rds On (Max) @ Id, Vgs :

9.7m Ω @ 81A, 10V

JESD-609 Code :

e3

Nominal Vgs :

5 V

Length :

15.87mm

Threshold Voltage :

5V

Radiation Hardening :

No

Peak Reflow Temperature (Cel) :

250

Turn-Off Delay Time :

64 ns

Package / Case :

TO-247-3

Gate to Source Voltage (Vgs) :

30V

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

Contact Plating :

Tin

Avalanche Energy Rating (Eas) :

760 mJ

Vgs (Max) :

±30V

FET Type :

N-Channel

Operating Temperature :

-55°C~175°C TJ

Vgs(th) (Max) @ Id :

5V @ 250μA

REACH SVHC :

No SVHC