IRFP460
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- Mfr.Part #
- IRFP460
- Manufacturer
- STMicroelectronics
- Package / Case
- TO-247-3
- Datasheet
- Download
- Description
- MOSFET N-CH 500V 18.4A TO247-3
- Stock
- 8,184
- In Stock ：
- 8,184
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- Manufacturer :
- STMicroelectronics
- Product Category :
- Transistors - FETs, MOSFETs - Single
- Avalanche Energy Rating (Eas) :
- 960 mJ
- JESD-609 Code :
- e0
- Mounting Type :
- Through Hole
- Base Part Number :
- IRFP
- Rise Time :
- 21ns
- Moisture Sensitivity Level (MSL) :
- 1 (Unlimited)
- Packaging :
- Tube
- Turn On Delay Time :
- 29 ns
- Vgs(th) (Max) @ Id :
- 4V @ 250µA
- JESD-30 Code :
- R-PSFM-T3
- Lead Free :
- Contains Lead
- Pin Count :
- 3
- Operating Mode :
- ENHANCEMENT MODE
- Drain to Source Breakdown Voltage :
- 500V
- Radiation Hardening :
- No
- Input Capacitance (Ciss) (Max) @ Vds :
- 2980pF @ 25V
- Rds On (Max) @ Id, Vgs :
- 270m Ω @ 9A, 10V
- Drain Current-Max (Abs) (ID) :
- 18.4A
- Drive Voltage (Max Rds On,Min Rds On) :
- 10V
- Operating Temperature :
- 150°C TJ
- Power Dissipation-Max :
- 220W Tc
- Transistor Application :
- SWITCHING
- Transistor Element Material :
- SILICON
- Power Dissipation :
- 220W
- Terminal Finish :
- Tin/Lead (Sn/Pb)
- ECCN Code :
- EAR99
- Element Configuration :
- Single
- FET Type :
- N-Channel
- JEDEC-95 Code :
- TO-247AC
- Voltage - Rated DC :
- 500V
- Current Rating :
- 20A
- Fall Time (Typ) :
- 21 ns
- Gate Charge (Qg) (Max) @ Vgs :
- 128nC @ 10V
- Number of Elements :
- 1
- Number of Terminations :
- 3
- Drain-source On Resistance-Max :
- 0.27Ohm
- Current - Continuous Drain (Id) @ 25°C :
- 18.4A Tc
- Continuous Drain Current (ID) :
- 30A
- Gate to Source Voltage (Vgs) :
- 30V
- Series :
- PowerMESH™ II
- RoHS Status :
- Non-RoHS Compliant
- Vgs (Max) :
- ±30V
- Mount :
- Through Hole
- Pulsed Drain Current-Max (IDM) :
- 73.6A
- Package / Case :
- TO-247-3
- Datasheets
- IRFP460
N-Channel Tube 270m Ω @ 9A, 10V ±30V 2980pF @ 25V 128nC @ 10V TO-247-3
IRFP460 Overview
There is an avalanche breakdown in which energy is applied to the MOSFET to cause it to break down, and this energy is called avalanche energy, and the avalanche energy rating (Eas) is 960 mJ.Op amps with either input grounded have a fixed input capacitance parameter, CI, and this device has a 2980pF @ 25V maximal input capacitance.Devices can conduct a maximum continuous current of 3 amps in the drain area, so the continuous drain current (ID) for this device is 30A amps.In this device, the drain-source breakdown voltage is 500V and VGS=500V, so the drain-source breakdown voltage is 500V in this case.A device can conduct a maximum continuous current of [18.4A] according to its drain current.As far as peak drain current is concerned, its maximum pulsed current is 73.6A.A turn-on delay time of 29 ns indicates the time it takes for the input capacitance of the device to charge before drain current conduction starts.Generally, the gate-source voltage (VGS) of a FET transistor is the voltage across its gate-source terminal, which is 30V.A device like this reduces its overall power consumption when it uses drive voltage (10V).
IRFP460 Features
the avalanche energy rating (Eas) is 960 mJ
a continuous drain current (ID) of 30A
a drain-to-source breakdown voltage of 500V voltage
based on its rated peak drain current 73.6A.
IRFP460 Applications
There are a lot of STMicroelectronics
IRFP460 applications of single MOSFETs transistors.
- Synchronous Rectification for ATX 1 Server I Telecom PSU
- Motor drives and Uninterruptible Power Supplies
- Micro Solar Inverter
- DC/DC converters
- Power Tools
- Motor Drives and Uninterruptible Power Supples
- Synchronous Rectification
- Battery Protection Circuit
- Telecom 1 Sever Power Supplies
- Industrial Power Supplies
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