IRFP450PBF

Manufacturer :

Vishay

Product Category :

Transistors - FETs, MOSFETs - Single

Operating Temperature :

-55°C~150°C TJ

Width :

5.31mm

FET Type :

N-Channel

Element Configuration :

Single

Number of Channels :

1

Turn On Delay Time :

17 ns

Length :

15.87mm

Max Junction Temperature (Tj) :

150°C

Continuous Drain Current (ID) :

14A

Number of Pins :

3

Drive Voltage (Max Rds On,Min Rds On) :

10V

Mount :

Through Hole

Drain to Source Breakdown Voltage :

500V

Termination :

Through Hole

Rise Time :

47ns

Lead Pitch :

5.45mm

Voltage - Rated DC :

500V

Mounting Type :

Through Hole

Lead Free :

Lead Free

Current - Continuous Drain (Id) @ 25°C :

14A Tc

Rds On (Max) @ Id, Vgs :

400m Ω @ 8.4A, 10V

Published :

2011

Gate to Source Voltage (Vgs) :

20V

Radiation Hardening :

No

Weight :

38.000013g

Power Dissipation :

190W

Transistor Application :

SWITCHING

Recovery Time :

810 ns

Power Dissipation-Max :

190W Tc

Number of Elements :

1

Number of Terminations :

3

Pulsed Drain Current-Max (IDM) :

56A

Fall Time (Typ) :

44 ns

REACH SVHC :

Unknown

Transistor Element Material :

SILICON

Factory Lead Time :

12 Weeks

Current Rating :

14A

Vgs(th) (Max) @ Id :

4V @ 250µA

Height :

24.86mm

Input Capacitance (Ciss) (Max) @ Vds :

2600pF @ 25V

Package / Case :

TO-247-3

Contact Plating :

Tin

RoHS Status :

ROHS3 Compliant

Nominal Vgs :

2 V

Resistance :

400mOhm

Vgs (Max) :

±20V

Additional Feature :

AVALANCHE RATED

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

Avalanche Energy Rating (Eas) :

760 mJ

Pin Count :

3

Operating Mode :

ENHANCEMENT MODE

Dual Supply Voltage :

500V

Gate Charge (Qg) (Max) @ Vgs :

150nC @ 10V

Packaging :

Tube

Threshold Voltage :

4V

Turn-Off Delay Time :

92 ns