IRFP4468PBF

Manufacturer :

Infineon Technologies

Product Category :

Transistors - FETs, MOSFETs - Single

Rise Time :

230ns

Dual Supply Voltage :

100V

Height :

24.99mm

Avalanche Energy Rating (Eas) :

740 mJ

Gate to Source Voltage (Vgs) :

20V

Number of Pins :

3

Termination :

Through Hole

Nominal Vgs :

4 V

Time@Peak Reflow Temperature-Max (s) :

30

Lead Free :

Lead Free

Packaging :

Tube

Gate Charge (Qg) (Max) @ Vgs :

540nC @ 10V

Package / Case :

TO-247-3

Power Dissipation :

520W

Element Configuration :

Single

Case Connection :

DRAIN

Series :

HEXFET®

Number of Elements :

1

Current - Continuous Drain (Id) @ 25°C :

195A Tc

Mounting Type :

Through Hole

Width :

5.3086mm

Input Capacitance (Ciss) (Max) @ Vds :

19860pF @ 50V

Transistor Application :

SWITCHING

Drive Voltage (Max Rds On,Min Rds On) :

10V

Drain to Source Breakdown Voltage :

100V

Number of Channels :

1

ECCN Code :

EAR99

JESD-609 Code :

e3

RoHS Status :

ROHS3 Compliant

Turn-Off Delay Time :

160 ns

Length :

15.87mm

Threshold Voltage :

4V

FET Type :

N-Channel

Operating Mode :

ENHANCEMENT MODE

Turn On Delay Time :

52 ns

Qualification Status :

Not Qualified

Vgs (Max) :

±20V

Continuous Drain Current (ID) :

290A

Operating Temperature :

-55°C~175°C TJ

Max Junction Temperature (Tj) :

175°C

Transistor Element Material :

SILICON

Peak Reflow Temperature (Cel) :

250

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

Published :

2004

Contact Plating :

Tin

JEDEC-95 Code :

TO-247AC

Resistance :

2.6MOhm

REACH SVHC :

No SVHC

Power Dissipation-Max :

520W Tc

Mount :

Through Hole

Rds On (Max) @ Id, Vgs :

2.6m Ω @ 180A, 10V

Fall Time (Typ) :

260 ns

Number of Terminations :

3

Factory Lead Time :

12 Weeks

Vgs(th) (Max) @ Id :

4V @ 250µA