IRFP4410ZPBF

Manufacturer :

Infineon Technologies

Product Category :

Transistors - FETs, MOSFETs - Single

Operating Mode :

ENHANCEMENT MODE

Rise Time :

52ns

Transistor Element Material :

SILICON

Mounting Type :

Through Hole

Avalanche Energy Rating (Eas) :

242 mJ

Turn On Delay Time :

16 ns

Drain to Source Breakdown Voltage :

100V

Rds On (Max) @ Id, Vgs :

9m Ω @ 58A, 10V

Vgs (Max) :

±20V

Continuous Drain Current (ID) :

97A

RoHS Status :

ROHS3 Compliant

Dual Supply Voltage :

100V

FET Type :

N-Channel

Vgs(th) (Max) @ Id :

4V @ 150μA

Length :

15.87mm

Radiation Hardening :

No

Recovery Time :

57 ns

Package / Case :

TO-247-3

Nominal Vgs :

4 V

Lead Free :

Lead Free

Element Configuration :

Single

Mount :

Through Hole

Packaging :

Bulk

Turn-Off Delay Time :

43 ns

Height :

20.7mm

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

ECCN Code :

EAR99

Factory Lead Time :

10 Weeks

Power Dissipation :

230W

REACH SVHC :

No SVHC

Series :

HEXFET®

Current - Continuous Drain (Id) @ 25°C :

97A Tc

Drain-source On Resistance-Max :

0.009Ohm

Drive Voltage (Max Rds On,Min Rds On) :

10V

Operating Temperature :

-55°C~175°C TJ

Gate Charge (Qg) (Max) @ Vgs :

120nC @ 10V

Case Connection :

DRAIN

Gate to Source Voltage (Vgs) :

20V

Width :

5.3086mm

Number of Terminations :

3

Fall Time (Typ) :

57 ns

JEDEC-95 Code :

TO-247AC

Number of Pins :

3

Published :

2004

Number of Elements :

1

Termination :

Through Hole

Input Capacitance (Ciss) (Max) @ Vds :

4820pF @ 50V

Threshold Voltage :

4V

Power Dissipation-Max :

230W Tc

Transistor Application :

SWITCHING