IRFP4368PBF

Manufacturer :

Infineon Technologies

Product Category :

Transistors - FETs, MOSFETs - Single

Power Dissipation-Max :

520W Tc

Nominal Vgs :

4 V

Continuous Drain Current (ID) :

350A

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

JEDEC-95 Code :

TO-247AC

REACH SVHC :

No SVHC

Dual Supply Voltage :

75V

Lead Free :

Lead Free

Threshold Voltage :

4V

Gate Charge (Qg) (Max) @ Vgs :

570nC @ 10V

Radiation Hardening :

No

Drive Voltage (Max Rds On,Min Rds On) :

10V

Length :

15.87mm

Published :

2008

Transistor Application :

SWITCHING

Vgs (Max) :

±20V

Vgs(th) (Max) @ Id :

4V @ 250µA

ECCN Code :

EAR99

Width :

5.3086mm

Operating Mode :

ENHANCEMENT MODE

Drain to Source Breakdown Voltage :

75V

Case Connection :

DRAIN

Turn On Delay Time :

43 ns

Gate to Source Voltage (Vgs) :

20V

Fall Time (Typ) :

260 ns

Mounting Type :

Through Hole

Current - Continuous Drain (Id) @ 25°C :

195A Tc

Series :

HEXFET®

Packaging :

Tube

Rise Time :

220ns

Height :

20.7mm

Power Dissipation :

520W

Rds On (Max) @ Id, Vgs :

1.85m Ω @ 195A, 10V

Number of Terminations :

3

Package / Case :

TO-247-3

Element Configuration :

Single

Mount :

Through Hole

Transistor Element Material :

SILICON

Operating Temperature :

-55°C~175°C TJ

Recovery Time :

200 ns

RoHS Status :

ROHS3 Compliant

Termination :

Through Hole

Turn-Off Delay Time :

170 ns

Input Capacitance (Ciss) (Max) @ Vds :

19230pF @ 50V

FET Type :

N-Channel

Number of Pins :

3

Resistance :

1.85mOhm

Number of Elements :

1

Factory Lead Time :

12 Weeks