IRFP4310ZPBF

Manufacturer :

Infineon Technologies

Product Category :

Transistors - FETs, MOSFETs - Single

Length :

15.87mm

JEDEC-95 Code :

TO-247AC

Published :

2004

Fall Time (Typ) :

57 ns

Mount :

Through Hole

Number of Pins :

3

Resistance :

6mOhm

REACH SVHC :

No SVHC

Drive Voltage (Max Rds On,Min Rds On) :

10V

Number of Terminations :

3

Height :

20.7mm

Rise Time :

60ns

Threshold Voltage :

4V

Width :

5.3086mm

FET Type :

N-Channel

Operating Mode :

ENHANCEMENT MODE

Current - Continuous Drain (Id) @ 25°C :

120A Tc

Transistor Application :

SWITCHING

Series :

HEXFET®

Case Connection :

DRAIN

Power Dissipation :

280W

Packaging :

Bulk

Number of Elements :

1

Factory Lead Time :

12 Weeks

Radiation Hardening :

No

Vgs(th) (Max) @ Id :

4V @ 150μA

Element Configuration :

Single

Mounting Type :

Through Hole

Package / Case :

TO-247-3

Operating Temperature :

-55°C~175°C TJ

Turn-Off Delay Time :

55 ns

Gate to Source Voltage (Vgs) :

20V

Lead Free :

Lead Free

Turn On Delay Time :

20 ns

Input Capacitance (Ciss) (Max) @ Vds :

6860pF @ 50V

Continuous Drain Current (ID) :

134A

RoHS Status :

ROHS3 Compliant

Recovery Time :

40 ns

Pulsed Drain Current-Max (IDM) :

560A

Gate Charge (Qg) (Max) @ Vgs :

170nC @ 10V

Rds On (Max) @ Id, Vgs :

6m Ω @ 75A, 10V

Drain to Source Breakdown Voltage :

100V

Nominal Vgs :

4 V

Transistor Element Material :

SILICON

Dual Supply Voltage :

100V

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

Power Dissipation-Max :

280W Tc

ECCN Code :

EAR99

Vgs (Max) :

±20V

Termination :

Through Hole