IRFP4227PBF
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- Mfr.Part #
- IRFP4227PBF
- Manufacturer
- Infineon Technologies
- Package / Case
- TO-247-3
- Datasheet
- Download
- Description
- MOSFET N-CH 200V 65A TO247AC
- Stock
- 405,550
- In Stock ：
- 405,550
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- Manufacturer :
- Infineon Technologies
- Product Category :
- Transistors - FETs, MOSFETs - Single
- Case Connection :
- DRAIN
- Gate to Source Voltage (Vgs) :
- 30V
- RoHS Status :
- ROHS3 Compliant
- Fall Time (Typ) :
- 31 ns
- Dual Supply Voltage :
- 240V
- REACH SVHC :
- No SVHC
- Mounting Type :
- Through Hole
- Series :
- HEXFET®
- Power Dissipation-Max :
- 330W Tc
- ECCN Code :
- EAR99
- FET Type :
- N-Channel
- Power Dissipation :
- 330W
- Package / Case :
- TO-247-3
- Recovery Time :
- 150 ns
- Turn-Off Delay Time :
- 21 ns
- Published :
- 2007
- Pulsed Drain Current-Max (IDM) :
- 260A
- Lead Free :
- Lead Free
- Number of Terminations :
- 3
- Packaging :
- Tube
- Radiation Hardening :
- No
- JEDEC-95 Code :
- TO-247AC
- Length :
- 15.87mm
- Input Capacitance (Ciss) (Max) @ Vds :
- 4600pF @ 25V
- Factory Lead Time :
- 12 Weeks
- Number of Elements :
- 1
- Current - Continuous Drain (Id) @ 25°C :
- 65A Tc
- Resistance :
- 25mOhm
- Number of Pins :
- 3
- Threshold Voltage :
- 5V
- Contact Plating :
- Tin
- Transistor Element Material :
- SILICON
- Drive Voltage (Max Rds On,Min Rds On) :
- 10V
- Nominal Vgs :
- 5 V
- Transistor Application :
- SWITCHING
- Element Configuration :
- Single
- Operating Mode :
- ENHANCEMENT MODE
- Width :
- 5.3086mm
- Continuous Drain Current (ID) :
- 65A
- Operating Temperature :
- -40°C~175°C TJ
- Moisture Sensitivity Level (MSL) :
- 1 (Unlimited)
- Vgs(th) (Max) @ Id :
- 5V @ 250μA
- Height :
- 20.7mm
- Turn On Delay Time :
- 33 ns
- Termination :
- Through Hole
- Vgs (Max) :
- ±30V
- Additional Feature :
- FAST SWITCHING
- Drain to Source Breakdown Voltage :
- 200V
- Rds On (Max) @ Id, Vgs :
- 25m Ω @ 46A, 10V
- Mount :
- Through Hole
- Gate Charge (Qg) (Max) @ Vgs :
- 98nC @ 10V
- Rise Time :
- 20ns
- Datasheets
- IRFP4227PBF
N-Channel Tube 25m Ω @ 46A, 10V ±30V 4600pF @ 25V 98nC @ 10V TO-247-3
IRFP4227PBF Overview
Op amps with either input grounded have a fixed input capacitance parameter, CI, and this device has a 4600pF @ 25V maximal input capacitance.Devices can conduct a maximum continuous current of 3 amps in the drain area, so the continuous drain current (ID) for this device is 65A amps.In this device, the drain-source breakdown voltage is 200V and VGS=200V, so the drain-source breakdown voltage is 200V in this case.It is [21 ns] because it takes time to charge the input capacitance of the device before drain current conduction can begin.As far as peak drain current is concerned, its maximum pulsed current is 260A.A turn-on delay time of 33 ns indicates the time it takes for the input capacitance of the device to charge before drain current conduction starts.Generally, the gate-source voltage (VGS) of a FET transistor is the voltage across its gate-source terminal, which is 30V.Normally, electrical devices are set to activate all of their operations at threshold voltages, and this transistor's threshold voltage is 5V.A device like this reduces its overall power consumption when it uses drive voltage (10V).
IRFP4227PBF Features
a continuous drain current (ID) of 65A
a drain-to-source breakdown voltage of 200V voltage
the turn-off delay time is 21 ns
based on its rated peak drain current 260A.
a threshold voltage of 5V
IRFP4227PBF Applications
There are a lot of Infineon Technologies
IRFP4227PBF applications of single MOSFETs transistors.
- Synchronous Rectification for ATX 1 Server I Telecom PSU
- Motor drives and Uninterruptible Power Supplies
- Micro Solar Inverter
- DC/DC converters
- Power Tools
- Motor Drives and Uninterruptible Power Supples
- Synchronous Rectification
- Battery Protection Circuit
- Telecom 1 Sever Power Supplies
- Industrial Power Supplies
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