IRFP4137PBF

Manufacturer :

Infineon Technologies

Product Category :

Transistors - FETs, MOSFETs - Single

Fall Time (Typ) :

20 ns

Radiation Hardening :

No

Published :

2008

Turn On Delay Time :

18 ns

RoHS Status :

ROHS3 Compliant

Vgs(th) (Max) @ Id :

5V @ 250μA

Packaging :

Tube

REACH SVHC :

No SVHC

Width :

5.31mm

Length :

15.87mm

Vgs (Max) :

±20V

Element Configuration :

Single

Mounting Type :

Through Hole

Gate Charge (Qg) (Max) @ Vgs :

125nC @ 10V

Threshold Voltage :

3V

Continuous Drain Current (ID) :

38A

Number of Pins :

3

Package / Case :

TO-247-3

Turn-Off Delay Time :

34 ns

Mount :

Through Hole

ECCN Code :

EAR99

Power Dissipation-Max :

341W Tc

Drain to Source Breakdown Voltage :

300V

Height :

20.7mm

Lead Free :

Lead Free

Input Capacitance (Ciss) (Max) @ Vds :

5168pF @ 50V

Series :

HEXFET®

Gate to Source Voltage (Vgs) :

20V

Rds On (Max) @ Id, Vgs :

69m Ω @ 24A, 10V

Current - Continuous Drain (Id) @ 25°C :

38A Tc

Power Dissipation :

341W

Resistance :

69mOhm

Factory Lead Time :

12 Weeks

Number of Elements :

1

Rise Time :

23ns

FET Type :

N-Channel

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

Operating Temperature :

-55°C~175°C TJ

Drive Voltage (Max Rds On,Min Rds On) :

10V