IRFP4110PBF

Manufacturer :

Infineon Technologies

Product Category :

Transistors - FETs, MOSFETs - Single

JESD-609 Code :

e3

Number of Terminations :

3

Number of Elements :

1

Packaging :

Tube

Rise Time :

67ns

Package / Case :

TO-247-3

Factory Lead Time :

12 Weeks

Power Dissipation-Max :

370W Tc

Drive Voltage (Max Rds On,Min Rds On) :

10V

Vgs (Max) :

±20V

Turn-Off Delay Time :

78 ns

Current - Continuous Drain (Id) @ 25°C :

120A Tc

Nominal Vgs :

4 V

Threshold Voltage :

4V

Resistance :

4.5mOhm

Drain to Source Breakdown Voltage :

100V

Height :

20.7mm

Termination :

Through Hole

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

Continuous Drain Current (ID) :

180A

Gate Charge (Qg) (Max) @ Vgs :

210nC @ 10V

REACH SVHC :

No SVHC

Radiation Hardening :

No

Length :

15.87mm

Element Configuration :

Single

Operating Temperature :

-55°C~175°C TJ

Operating Mode :

ENHANCEMENT MODE

Transistor Application :

SWITCHING

Input Capacitance (Ciss) (Max) @ Vds :

9620pF @ 50V

Peak Reflow Temperature (Cel) :

250

Rds On (Max) @ Id, Vgs :

4.5m Ω @ 75A, 10V

Turn On Delay Time :

25 ns

Mounting Type :

Through Hole

Series :

HEXFET®

Fall Time (Typ) :

88 ns

Number of Pins :

3

JEDEC-95 Code :

TO-247AC

Width :

5.3086mm

Power Dissipation :

370W

FET Type :

N-Channel

Time@Peak Reflow Temperature-Max (s) :

30

Terminal Finish :

MATTE TIN OVER NICKEL

Mount :

Through Hole

Lead Free :

Lead Free

Gate to Source Voltage (Vgs) :

20V

Case Connection :

DRAIN

Transistor Element Material :

SILICON

Pulsed Drain Current-Max (IDM) :

670A

ECCN Code :

EAR99

Dual Supply Voltage :

100V

Recovery Time :

75 ns

RoHS Status :

ROHS3 Compliant

Published :

2008

Vgs(th) (Max) @ Id :

4V @ 250µA