IRFP4004PBF

Manufacturer :

Infineon Technologies

Product Category :

Transistors - FETs, MOSFETs - Single

Continuous Drain Current (ID) :

350A

Series :

HEXFET®

Gate Charge (Qg) (Max) @ Vgs :

330nC @ 10V

Number of Elements :

1

Resistance :

1.7MOhm

Turn On Delay Time :

59 ns

Fall Time (Typ) :

190 ns

REACH SVHC :

No SVHC

Transistor Application :

SWITCHING

Threshold Voltage :

4V

ECCN Code :

EAR99

Input Capacitance (Ciss) (Max) @ Vds :

8920pF @ 25V

Vgs(th) (Max) @ Id :

4V @ 250µA

RoHS Status :

ROHS3 Compliant

FET Type :

N-Channel

Number of Terminations :

3

Vgs (Max) :

±20V

Radiation Hardening :

No

Power Dissipation :

380W

Avalanche Energy Rating (Eas) :

290 mJ

Transistor Element Material :

SILICON

Recovery Time :

130 ns

Published :

2003

Operating Mode :

ENHANCEMENT MODE

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

Length :

15.87mm

Rise Time :

370ns

Operating Temperature :

-55°C~175°C TJ

Drive Voltage (Max Rds On,Min Rds On) :

10V

Turn-Off Delay Time :

160 ns

JEDEC-95 Code :

TO-247AC

Power Dissipation-Max :

380W Tc

Gate to Source Voltage (Vgs) :

20V

Mounting Type :

Through Hole

Package / Case :

TO-247-3

Lead Free :

Lead Free

Element Configuration :

Single

Case Connection :

DRAIN

Width :

5.3086mm

Mount :

Through Hole

Current - Continuous Drain (Id) @ 25°C :

195A Tc

Number of Pins :

3

Factory Lead Time :

12 Weeks

Packaging :

Tube

Height :

20.7mm

Rds On (Max) @ Id, Vgs :

1.7m Ω @ 195A, 10V

Drain to Source Breakdown Voltage :

40V