IRFP3703PBF

Manufacturer :

Infineon Technologies

Product Category :

Transistors - FETs, MOSFETs - Single

Rds On (Max) @ Id, Vgs :

2.8m Ω @ 76A, 10V

Published :

2001

JEDEC-95 Code :

TO-247AC

Rise Time :

123ns

ECCN Code :

EAR99

Fall Time (Typ) :

24 ns

Number of Terminations :

3

Turn On Delay Time :

18 ns

Width :

5.3086mm

Series :

HEXFET®

Recovery Time :

120 ns

Vgs(th) (Max) @ Id :

4V @ 250µA

Height :

20.7mm

Operating Mode :

ENHANCEMENT MODE

Packaging :

Bulk

REACH SVHC :

No SVHC

Power Dissipation-Max :

3.8W Ta 230W Tc

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

Drain to Source Breakdown Voltage :

30V

Nominal Vgs :

4 V

Transistor Application :

SWITCHING

Input Capacitance (Ciss) (Max) @ Vds :

8250pF @ 25V

RoHS Status :

ROHS3 Compliant

Termination :

Through Hole

Length :

15.87mm

Dual Supply Voltage :

30V

Operating Temperature :

-55°C~175°C TJ

Factory Lead Time :

12 Weeks

Additional Feature :

AVALANCHE RATED, ULTRA LOW RESISTANCE

Number of Elements :

1

Package / Case :

TO-247-3

Mounting Type :

Through Hole

Current - Continuous Drain (Id) @ 25°C :

210A Tc

Voltage - Rated DC :

30V

Lead Free :

Lead Free

Gate Charge (Qg) (Max) @ Vgs :

209nC @ 10V

Case Connection :

DRAIN

Transistor Element Material :

SILICON

Current Rating :

210A

Power Dissipation :

230W

Turn-Off Delay Time :

53 ns

Gate to Source Voltage (Vgs) :

20V

Continuous Drain Current (ID) :

210A

Drain Current-Max (Abs) (ID) :

90A

Mount :

Through Hole

Element Configuration :

Single

Drive Voltage (Max Rds On,Min Rds On) :

7V 10V

FET Type :

N-Channel

Radiation Hardening :

No

Number of Pins :

3

Vgs (Max) :

±20V