IRFP3703

Manufacturer :

Infineon Technologies

Product Category :

Transistors - FETs, MOSFETs - Single

Number of Elements :

1

Configuration :

SINGLE WITH BUILT-IN DIODE

Case Connection :

DRAIN

Additional Feature :

AVALANCHE RATED

Vgs(th) (Max) @ Id :

4V @ 250µA

Drain to Source Voltage (Vdss) :

30V

Series :

HEXFET®

JESD-30 Code :

R-PSFM-T3

HTS Code :

8541.29.00.95

Published :

2001

Peak Reflow Temperature (Cel) :

NOT SPECIFIED

Input Capacitance (Ciss) (Max) @ Vds :

8250pF @ 25V

Avalanche Energy Rating (Eas) :

1700 mJ

Package / Case :

TO-247-3

Vgs (Max) :

±20V

Operating Mode :

ENHANCEMENT MODE

Pulsed Drain Current-Max (IDM) :

1000A

Drive Voltage (Max Rds On,Min Rds On) :

7V 10V

Qualification Status :

Not Qualified

Packaging :

Bulk

Current - Continuous Drain (Id) @ 25°C :

210A Tc

ECCN Code :

EAR99

Power Dissipation-Max :

3.8W Ta 230W Tc

RoHS Status :

Non-RoHS Compliant

Drain Current-Max (Abs) (ID) :

210A

Transistor Application :

SWITCHING

Drain-source On Resistance-Max :

0.0039Ohm

Time@Peak Reflow Temperature-Max (s) :

NOT SPECIFIED

Rds On (Max) @ Id, Vgs :

2.8m Ω @ 76A, 10V

FET Type :

N-Channel

Terminal Position :

Single

Operating Temperature :

-55°C~175°C TJ

JEDEC-95 Code :

TO-247AC

Mounting Type :

Through Hole

Surface Mount :

No

Transistor Element Material :

SILICON

Gate Charge (Qg) (Max) @ Vgs :

209nC @ 10V

DS Breakdown Voltage-Min :

30V

Number of Terminations :

3

Moisture Sensitivity Level (MSL) :

1 (Unlimited)