IRFP3206PBF

Manufacturer :

Infineon Technologies

Product Category :

Transistors - FETs, MOSFETs - Single

Number of Elements :

1

Package / Case :

TO-247-3

Transistor Application :

SWITCHING

Mount :

Through Hole

Max Junction Temperature (Tj) :

175°C

Element Configuration :

Single

Fall Time (Typ) :

83 ns

Turn On Delay Time :

19 ns

Resistance :

3mOhm

Lead Free :

Lead Free

Series :

HEXFET®

Turn-Off Delay Time :

55 ns

Rds On (Max) @ Id, Vgs :

3m Ω @ 75A, 10V

Current - Continuous Drain (Id) @ 25°C :

120A Tc

Vgs (Max) :

±20V

FET Type :

N-Channel

Continuous Drain Current (ID) :

200A

Length :

15.87mm

RoHS Status :

ROHS3 Compliant

Number of Pins :

3

Width :

5.3086mm

Gate Charge (Qg) (Max) @ Vgs :

170nC @ 10V

Power Dissipation-Max :

280W Tc

Drain to Source Breakdown Voltage :

60V

Packaging :

Tube

Operating Temperature :

-55°C~175°C TJ

Gate to Source Voltage (Vgs) :

20V

Case Connection :

DRAIN

JEDEC-95 Code :

TO-247AC

Height :

24.99mm

Mounting Type :

Through Hole

Factory Lead Time :

12 Weeks

Radiation Hardening :

No

Pulsed Drain Current-Max (IDM) :

840A

ECCN Code :

EAR99

Power Dissipation :

280W

Threshold Voltage :

4V

Rise Time :

82ns

Number of Terminations :

3

REACH SVHC :

No SVHC

Number of Channels :

1

Published :

2008

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

Recovery Time :

50 ns

Drive Voltage (Max Rds On,Min Rds On) :

10V

Operating Mode :

ENHANCEMENT MODE

Vgs(th) (Max) @ Id :

4V @ 150μA

Transistor Element Material :

SILICON

Input Capacitance (Ciss) (Max) @ Vds :

6540pF @ 50V