IRFP3206PBF

Manufacturer :

Infineon Technologies

Product Category :

Transistors - FETs, MOSFETs - Single

Number of Elements :

1

Published :

2008

Vgs(th) (Max) @ Id :

4V @ 150μA

Number of Pins :

3

Case Connection :

DRAIN

Turn On Delay Time :

19 ns

Turn-Off Delay Time :

55 ns

Number of Channels :

1

REACH SVHC :

No SVHC

Vgs (Max) :

±20V

Transistor Application :

SWITCHING

Threshold Voltage :

4V

Factory Lead Time :

12 Weeks

Width :

5.3086mm

Number of Terminations :

3

Radiation Hardening :

No

Current - Continuous Drain (Id) @ 25°C :

120A Tc

Drive Voltage (Max Rds On,Min Rds On) :

10V

Operating Mode :

ENHANCEMENT MODE

Mounting Type :

Through Hole

Mount :

Through Hole

Recovery Time :

50 ns

Gate Charge (Qg) (Max) @ Vgs :

170nC @ 10V

Rise Time :

82ns

Power Dissipation-Max :

280W Tc

Package / Case :

TO-247-3

Continuous Drain Current (ID) :

200A

Pulsed Drain Current-Max (IDM) :

840A

Resistance :

3mOhm

Input Capacitance (Ciss) (Max) @ Vds :

6540pF @ 50V

ECCN Code :

EAR99

Packaging :

Tube

Transistor Element Material :

SILICON

Gate to Source Voltage (Vgs) :

20V

Power Dissipation :

280W

Lead Free :

Lead Free

JEDEC-95 Code :

TO-247AC

Series :

HEXFET®

Height :

24.99mm

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

Operating Temperature :

-55°C~175°C TJ

FET Type :

N-Channel

Max Junction Temperature (Tj) :

175°C

RoHS Status :

ROHS3 Compliant

Drain to Source Breakdown Voltage :

60V

Element Configuration :

Single

Rds On (Max) @ Id, Vgs :

3m Ω @ 75A, 10V

Fall Time (Typ) :

83 ns

Length :

15.87mm