IRFP2907PBF

Manufacturer :

Infineon Technologies

Product Category :

Transistors - FETs, MOSFETs - Single

Current Rating :

209A

Case Connection :

DRAIN

Gate to Source Voltage (Vgs) :

20V

Width :

5.3086mm

Length :

15.87mm

Voltage - Rated DC :

75V

Number of Channels :

1

Gate Charge (Qg) (Max) @ Vgs :

620nC @ 10V

Resistance :

4.5mOhm

Pulsed Drain Current-Max (IDM) :

840A

Package / Case :

TO-247-3

Height :

24.99mm

Number of Elements :

1

Transistor Application :

SWITCHING

Additional Feature :

AVALANCHE RATED, HIGH RELIABILITY, ULTRA-LOW RESISTANCE

Threshold Voltage :

4V

Vgs(th) (Max) @ Id :

4V @ 250µA

Turn-Off Delay Time :

130 ns

Mounting Type :

Through Hole

Fall Time (Typ) :

130 ns

Recovery Time :

210 ns

Input Capacitance (Ciss) (Max) @ Vds :

13000pF @ 25V

Element Configuration :

Single

Nominal Vgs :

4 V

Turn On Delay Time :

23 ns

Power Dissipation :

470W

RoHS Status :

ROHS3 Compliant

Mount :

Through Hole

Factory Lead Time :

12 Weeks

Termination :

Through Hole

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

Series :

HEXFET®

Continuous Drain Current (ID) :

209A

Number of Pins :

3

REACH SVHC :

No SVHC

Contact Plating :

Tin

ECCN Code :

EAR99

Max Junction Temperature (Tj) :

175°C

Drive Voltage (Max Rds On,Min Rds On) :

10V

Rds On (Max) @ Id, Vgs :

4.5m Ω @ 125A, 10V

Packaging :

Tube

Transistor Element Material :

SILICON

Published :

2004

Rise Time :

190ns

Operating Mode :

ENHANCEMENT MODE

JEDEC-95 Code :

TO-247AC

Drain to Source Breakdown Voltage :

75V

Operating Temperature :

-55°C~175°C TJ

Current - Continuous Drain (Id) @ 25°C :

209A Tc

FET Type :

N-Channel

Dual Supply Voltage :

75V

Power Dissipation-Max :

470W Tc

Vgs (Max) :

±20V

Lead Free :

Contains Lead, Lead Free

Drain Current-Max (Abs) (ID) :

90A

Number of Terminations :

3

Radiation Hardening :

No