IRFP260NPBF

Manufacturer :

Infineon Technologies

Product Category :

Transistors - FETs, MOSFETs - Single

Current - Continuous Drain (Id) @ 25°C :

50A Tc

Height :

20.2946mm

Resistance :

40mOhm

Width :

5.3mm

Operating Temperature :

-55°C~175°C TJ

Transistor Element Material :

SILICON

Termination :

Through Hole

Vgs(th) (Max) @ Id :

4V @ 250µA

Vgs (Max) :

±20V

FET Type :

N-Channel

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

Length :

15.875mm

Package / Case :

TO-247-3

Transistor Application :

SWITCHING

Continuous Drain Current (ID) :

50A

Number of Elements :

1

Power Dissipation-Max :

300W Tc

Factory Lead Time :

12 Weeks

Current Rating :

50A

Rise Time :

60ns

Gate Charge (Qg) (Max) @ Vgs :

234nC @ 10V

Avalanche Energy Rating (Eas) :

560 mJ

Operating Mode :

ENHANCEMENT MODE

Nominal Vgs :

4 V

Peak Reflow Temperature (Cel) :

250

Mounting Type :

Through Hole

Drive Voltage (Max Rds On,Min Rds On) :

10V

Recovery Time :

402 ns

Packaging :

Bulk

JEDEC-95 Code :

TO-247AC

Power Dissipation :

300W

Turn-Off Delay Time :

55 ns

Threshold Voltage :

4V

Number of Terminations :

3

Series :

HEXFET®

Radiation Hardening :

No

Additional Feature :

AVALANCHE RATED, HIGH RELIABILITY, ULTRA-LOW RESISTANCE

Published :

2004

Input Capacitance (Ciss) (Max) @ Vds :

4057pF @ 25V

Time@Peak Reflow Temperature-Max (s) :

30

Fall Time (Typ) :

48 ns

JESD-609 Code :

e3

REACH SVHC :

No SVHC

Element Configuration :

Single

Gate to Source Voltage (Vgs) :

20V

Number of Pins :

3

ECCN Code :

EAR99

Drain to Source Breakdown Voltage :

200V

RoHS Status :

ROHS3 Compliant

Dual Supply Voltage :

200V

Pulsed Drain Current-Max (IDM) :

200A

Case Connection :

DRAIN

Voltage - Rated DC :

200V

Terminal Finish :

Matte Tin (Sn) - with Nickel (Ni) barrier

Lead Free :

Contains Lead, Lead Free

Turn On Delay Time :

17 ns

Mount :

Through Hole

Rds On (Max) @ Id, Vgs :

40m Ω @ 28A, 10V