IRFP260MPBF

Manufacturer :

Infineon Technologies

Product Category :

Transistors - FETs, MOSFETs - Single

Current - Continuous Drain (Id) @ 25°C :

50A Tc

JESD-609 Code :

e3

Time@Peak Reflow Temperature-Max (s) :

30

Packaging :

Tube

Number of Elements :

1

Gate Charge (Qg) (Max) @ Vgs :

234nC @ 10V

ECCN Code :

EAR99

Drain to Source Breakdown Voltage :

200V

Vgs (Max) :

±20V

Operating Temperature :

-55°C~175°C TJ

Vgs(th) (Max) @ Id :

4V @ 250µA

Lead Free :

Lead Free

Terminal Finish :

MATTE TIN OVER NICKEL

Factory Lead Time :

12 Weeks

Drain-source On Resistance-Max :

0.04Ohm

Operating Mode :

ENHANCEMENT MODE

Number of Pins :

3

Drive Voltage (Max Rds On,Min Rds On) :

10V

Width :

5.2mm

Power Dissipation-Max :

300W Tc

Turn-Off Delay Time :

55 ns

Avalanche Energy Rating (Eas) :

560 mJ

Series :

HEXFET®

Peak Reflow Temperature (Cel) :

250

Package / Case :

TO-247-3

RoHS Status :

ROHS3 Compliant

Rds On (Max) @ Id, Vgs :

40m Ω @ 28A, 10V

Threshold Voltage :

4V

Turn On Delay Time :

17 ns

Power Dissipation :

300W

Fall Time (Typ) :

48 ns

Number of Terminations :

3

Element Configuration :

Single

Published :

2010

Mounting Type :

Through Hole

Length :

16.129mm

Transistor Application :

SWITCHING

Height :

21.1mm

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

Mount :

Through Hole

Input Capacitance (Ciss) (Max) @ Vds :

4057pF @ 25V

JEDEC-95 Code :

TO-247AC

Continuous Drain Current (ID) :

50A

Rise Time :

60ns

Additional Feature :

AVALANCHE RATED, HIGH RELIABILITY, ULTRA-LOW RESISTANCE

Transistor Element Material :

SILICON

FET Type :

N-Channel

Gate to Source Voltage (Vgs) :

20V

Qualification Status :

Not Qualified

Pulsed Drain Current-Max (IDM) :

200A

REACH SVHC :

No SVHC