IRFP254BFP001

Manufacturer :

Fairchild Semiconductor

Product Category :

Transistors - FETs, MOSFETs - Single

Package Shape :

RECTANGULAR

Power Dissipation-Max (Abs) :

221 W

Drain-source On Resistance-Max :

0.14 Ω

Max Operating Temperature :

150 °C

DS Breakdown Voltage-Min :

250 V

FET Technology :

METAL-OXIDE SEMICONDUCTOR

Configuration :

SINGLE WITH BUILT-IN DIODE

RoHS :

Compliant

Drain to Source Breakdown Voltage :

250 V

Turn-Off Delay Time :

300 ns

Terminal Form :

THROUGH-HOLE

ECCN Code :

EAR99

Number of Pins :

3

Terminal Finish :

Matte Tin (Sn)

JESD-609 Code :

e3

Reach Compliance Code :

Compliant

Peak Reflow Temperature (Cel) :

Not Applicable

Pulsed Drain Current-Max (IDM) :

100 A

Manufacturer :

Fairchild Semiconductor Corporation

Qualification Status :

Not Qualified

Terminal Position :

Single

Number of Terminals :

3

Subcategory :

FET General Purpose Power

Transistor Application :

SWITCHING

Polarity/Channel Type :

N-Channel

Operating Mode :

ENHANCEMENT MODE

Drain Current-Max (Abs) (ID) :

25 A

Continuous Drain Current (ID) :

25 A

Number of Elements :

1

Transistor Element Material :

SILICON

Drain to Source Resistance :

140 mΩ

Min Operating Temperature :

-55 °C

Element Configuration :

Single

Pin Count :

3

Avalanche Energy Rating (Eas) :

700 mJ

Gate to Source Voltage (Vgs) :

30 V

JESD-30 Code :

R-PSFM-T3

Power Dissipation :

221 W

Surface Mount :

No

Rise Time :

195 ns