IRFP251

Manufacturer :

Harris Corporation

Product Category :

Transistors - FETs, MOSFETs - Single

Drive Voltage (Max Rds On, Min Rds On) :

10V

Operating Temperature :

-55°C ~ 150°C (TJ)

Vgs (Max) :

±20V

Supplier Device Package :

TO-247

Rds On (Max) @ Id, Vgs :

85mOhm @ 17A, 10V

Pulsed Drain Current-Max (IDM) :

130 A

Reach Compliance Code :

Unknown

Package Shape :

RECTANGULAR

Surface Mount :

No

Terminal Finish :

TIN LEAD

JESD-609 Code :

e0

FET Type :

N-Channel

Transistor Element Material :

SILICON

Operating Mode :

ENHANCEMENT MODE

Polarity/Channel Type :

N-Channel

Number of Terminals :

3

Terminal Form :

THROUGH-HOLE

Qualification Status :

COMMERCIAL

Configuration :

SINGLE WITH BUILT-IN DIODE

Package :

Bulk

Pbfree Code :

No

Manufacturer :

Rochester Electronics LLC

JEDEC-95 Code :

TO-247

Gate Charge (Qg) (Max) @ Vgs :

120 nC @ 10 V

Power Dissipation (Max) :

180W (Tc)

Case Connection :

DRAIN

Number of Elements :

1

Mounting Type :

Through Hole

Transistor Application :

SWITCHING

Product Status :

Active

DS Breakdown Voltage-Min :

150 V

Series :

-

RoHS :

Non-Compliant

Drain-source On Resistance-Max :

0.085 Ω

FET Feature :

-

Drain to Source Voltage (Vdss) :

150 V

Vgs(th) (Max) @ Id :

4V @ 250µA

Peak Reflow Temperature (Cel) :

NOT SPECIFIED

FET Technology :

METAL-OXIDE SEMICONDUCTOR

Input Capacitance (Ciss) (Max) @ Vds :

2000 pF @ 25 V

Current - Continuous Drain (Id) @ 25°C :

33A (Tc)

Package / Case :

TO-247-3

JESD-30 Code :

R-PSFM-T3

Terminal Position :

Single