IRFP250MPBF

Manufacturer :

Infineon Technologies

Product Category :

Transistors - FETs, MOSFETs - Single

Power Dissipation-Max :

214W Tc

Drain to Source Breakdown Voltage :

200V

Gate to Source Voltage (Vgs) :

20V

Factory Lead Time :

12 Weeks

Published :

2009

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

Operating Temperature :

-55°C~175°C TJ

Turn-Off Delay Time :

41 ns

Threshold Voltage :

4V

Gate Charge (Qg) (Max) @ Vgs :

123nC @ 10V

Drive Voltage (Max Rds On,Min Rds On) :

10V

Terminal Finish :

MATTE TIN OVER NICKEL

Vgs (Max) :

±20V

Power Dissipation :

214W

JEDEC-95 Code :

TO-247AC

Operating Mode :

ENHANCEMENT MODE

Rds On (Max) @ Id, Vgs :

75m Ω @ 18A, 10V

Radiation Hardening :

No

Fall Time (Typ) :

33 ns

Lead Free :

Lead Free

Current - Continuous Drain (Id) @ 25°C :

30A Tc

Number of Terminations :

3

REACH SVHC :

No SVHC

Transistor Element Material :

SILICON

Series :

HEXFET®

Length :

16.129mm

Packaging :

Tube

Number of Pins :

3

Width :

5.2mm

Mount :

Through Hole

Mounting Type :

Through Hole

Element Configuration :

Single

RoHS Status :

ROHS3 Compliant

Resistance :

75mOhm

Number of Elements :

1

Transistor Application :

SWITCHING

Continuous Drain Current (ID) :

30A

Height :

21.1mm

Package / Case :

TO-247-3

FET Type :

N-Channel

Additional Feature :

AVALANCHE RATED, HIGH RELIABILITY

JESD-609 Code :

e3

Rise Time :

43ns

ECCN Code :

EAR99

Turn On Delay Time :

14 ns

Vgs(th) (Max) @ Id :

4V @ 250µA

Time@Peak Reflow Temperature-Max (s) :

30

Input Capacitance (Ciss) (Max) @ Vds :

2159pF @ 25V

Peak Reflow Temperature (Cel) :

250