IRFP250

Manufacturer :

STMicroelectronics

Product Category :

Transistors - FETs, MOSFETs - Single

JESD-30 Code :

R-PSFM-T3

Current Rating :

33A

Power Dissipation-Max :

180W Tc

Turn On Delay Time :

25 ns

Operating Mode :

ENHANCEMENT MODE

Operating Temperature :

150°C TJ

Vgs(th) (Max) @ Id :

4V @ 250µA

FET Type :

N-Channel

Lead Free :

Lead Free

Gate Charge (Qg) (Max) @ Vgs :

158nC @ 10V

Drain-source On Resistance-Max :

0.085Ohm

RoHS Status :

Non-RoHS Compliant

Power Dissipation :

180W

Transistor Application :

SWITCHING

Pulsed Drain Current-Max (IDM) :

132A

Number of Terminations :

3

Rise Time :

50ns

Series :

PowerMESH™ II

Gate to Source Voltage (Vgs) :

20V

Current - Continuous Drain (Id) @ 25°C :

33A Tc

Radiation Hardening :

No

Mount :

Through Hole

Continuous Drain Current (ID) :

33A

Terminal Finish :

Tin/Lead (Sn/Pb)

Avalanche Energy Rating (Eas) :

600 mJ

Fall Time (Typ) :

40 ns

ECCN Code :

EAR99

Drain to Source Breakdown Voltage :

200V

Element Configuration :

Single

Base Part Number :

IRFP

Package / Case :

TO-247-3

Number of Elements :

1

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

JESD-609 Code :

e0

Vgs (Max) :

±20V

Pin Count :

3

Mounting Type :

Through Hole

Rds On (Max) @ Id, Vgs :

85m Ω @ 16A, 10V

Input Capacitance (Ciss) (Max) @ Vds :

2850pF @ 25V

Voltage - Rated DC :

200V

Drive Voltage (Max Rds On,Min Rds On) :

10V

Packaging :

Tube

Transistor Element Material :

SILICON