IRFP245

Manufacturer :

Harris Corporation

Product Category :

Transistors - FETs, MOSFETs - Single

FET Feature :

-

Manufacturer :

Rochester Electronics LLC

RoHS :

Non-Compliant

Number of Elements :

1

Peak Reflow Temperature (Cel) :

NOT SPECIFIED

Mounting Type :

Through Hole

DS Breakdown Voltage-Min :

250 V

Package / Case :

TO-247-3

Transistor Element Material :

SILICON

Polarity/Channel Type :

N-Channel

Pbfree Code :

No

Reach Compliance Code :

Unknown

Avalanche Energy Rating (Eas) :

550 mJ

Case Connection :

DRAIN

FET Type :

N-Channel

Input Capacitance (Ciss) (Max) @ Vds :

1300 pF @ 25 V

Supplier Device Package :

TO-247

Vgs(th) (Max) @ Id :

4V @ 250µA

Vgs (Max) :

±20V

Number of Terminals :

3

Terminal Position :

Single

Drain-source On Resistance-Max :

0.34 Ω

Package Shape :

RECTANGULAR

Surface Mount :

No

Configuration :

SINGLE WITH BUILT-IN DIODE

Product Status :

Active

Gate Charge (Qg) (Max) @ Vgs :

59 nC @ 10 V

Series :

-

Operating Temperature :

-55°C ~ 150°C (TJ)

FET Technology :

METAL-OXIDE SEMICONDUCTOR

Drain to Source Voltage (Vdss) :

250 V

Operating Mode :

ENHANCEMENT MODE

Current - Continuous Drain (Id) @ 25°C :

14A (Tc)

JESD-30 Code :

R-PSFM-T3

Package :

Bulk

JESD-609 Code :

e0

Pulsed Drain Current-Max (IDM) :

56 A

Transistor Application :

SWITCHING

Rds On (Max) @ Id, Vgs :

340mOhm @ 10A, 10V

Qualification Status :

COMMERCIAL

Terminal Form :

THROUGH-HOLE

Power Dissipation (Max) :

150W (Tc)

Drive Voltage (Max Rds On, Min Rds On) :

10V

JEDEC-95 Code :

TO-247

Terminal Finish :

TIN LEAD