IRFP22N50APBF

Manufacturer :

Vishay

Product Category :

Transistors - FETs, MOSFETs - Single

Gate Charge (Qg) (Max) @ Vgs :

120nC @ 10V

Rds On (Max) @ Id, Vgs :

230mOhm @ 13A, 10V

Threshold Voltage :

4V

Length :

15.87mm

FET Type :

N-Channel

Vgs(th) (Max) @ Id :

4V @ 250µA

Drive Voltage (Max Rds On,Min Rds On) :

10V

Number of Elements :

1

Lead Free :

Lead Free

RoHS Status :

ROHS3 Compliant

Min Operating Temperature :

-55°C

Nominal Vgs :

2 V

Weight :

38.000013g

Max Operating Temperature :

150°C

Turn-Off Delay Time :

47 ns

Drain to Source Breakdown Voltage :

500V

Voltage - Rated DC :

500V

Drain to Source Voltage (Vdss) :

500V

REACH SVHC :

Unknown

Gate to Source Voltage (Vgs) :

30V

Input Capacitance (Ciss) (Max) @ Vds :

3450pF @ 25V

Power Dissipation-Max :

277W Tc

Current - Continuous Drain (Id) @ 25°C :

22A Tc

Drain to Source Resistance :

230mOhm

Published :

2008

Element Configuration :

Single

Current Rating :

22A

Number of Pins :

3

Number of Channels :

1

Vgs (Max) :

±30V

Packaging :

Tube

Factory Lead Time :

12 Weeks

Continuous Drain Current (ID) :

22A

Recovery Time :

850 ns

Height :

20.7mm

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

Turn On Delay Time :

26 ns

Radiation Hardening :

No

Package / Case :

TO-247-3

Rds On Max :

230 mΩ

Resistance :

230mOhm

Supplier Device Package :

TO-247-3

Power Dissipation :

277W

Rise Time :

94ns

Fall Time (Typ) :

47 ns

Input Capacitance :

3.45nF

Width :

5.31mm

Mounting Type :

Through Hole

Operating Temperature :

-55°C~150°C TJ

Mount :

Through Hole