IRFP150PBF
- Mfr.Part #
- IRFP150PBF
- Manufacturer
- Vishay
- Package / Case
- TO-247-3
- Datasheet
- Download
- Description
- MOSFET N-CH 100V 41A TO247-3
- Stock
- 52,464
- In Stock :
- 52,464
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- Manufacturer :
- Vishay
- Product Category :
- Transistors - FETs, MOSFETs - Single
- Drain to Source Resistance :
- 55mOhm
- Width :
- 5.31mm
- Fall Time (Typ) :
- 81 ns
- Rise Time :
- 120ns
- Weight :
- 38.000013g
- Current - Continuous Drain (Id) @ 25°C :
- 41A Tc
- Input Capacitance :
- 2.8nF
- REACH SVHC :
- Unknown
- Element Configuration :
- Single
- Gate to Source Voltage (Vgs) :
- 20V
- Rds On Max :
- 55 mΩ
- Input Capacitance (Ciss) (Max) @ Vds :
- 2800pF @ 25V
- Power Dissipation-Max :
- 230W Tc
- Turn On Delay Time :
- 16 ns
- Number of Elements :
- 1
- Current Rating :
- 41A
- Number of Pins :
- 3
- Vgs(th) (Max) @ Id :
- 4V @ 250µA
- Continuous Drain Current (ID) :
- 41A
- Length :
- 15.87mm
- Gate Charge (Qg) (Max) @ Vgs :
- 140nC @ 10V
- Min Operating Temperature :
- -55°C
- Rds On (Max) @ Id, Vgs :
- 55mOhm @ 25A, 10V
- FET Type :
- N-Channel
- Resistance :
- 55mOhm
- Factory Lead Time :
- 8 Weeks
- Height :
- 20.7mm
- Number of Channels :
- 1
- RoHS Status :
- ROHS3 Compliant
- Mount :
- Through Hole
- Power Dissipation :
- 230W
- Max Operating Temperature :
- 175°C
- Published :
- 2011
- Voltage - Rated DC :
- 100V
- Drain to Source Breakdown Voltage :
- 100V
- Operating Temperature :
- -55°C~175°C TJ
- Lead Free :
- Lead Free
- Moisture Sensitivity Level (MSL) :
- 1 (Unlimited)
- Drive Voltage (Max Rds On,Min Rds On) :
- 10V
- Mounting Type :
- Through Hole
- Supplier Device Package :
- TO-247-3
- Nominal Vgs :
- 4 V
- Packaging :
- Tube
- Threshold Voltage :
- 2V
- Turn-Off Delay Time :
- 60 ns
- Package / Case :
- TO-247-3
- Drain to Source Voltage (Vdss) :
- 100V
- Vgs (Max) :
- ±20V
- Datasheets
- IRFP150PBF

N-Channel Tube 55mOhm @ 25A, 10V ±20V 2800pF @ 25V 140nC @ 10V 100V TO-247-3
IRFP150PBF Overview
A device's maximal input capacitance is 2800pF @ 25V, which is defined as the capacitance between its input terminals with either input grounded.This device's continuous drain current (ID) is 41A, which represents the maximum continuous current it can conduct.In this device, the drain-source breakdown voltage is 100V and the drain-source breakdown voltage is the VDS at which a specified value of ID flows.Its turn-off delay time is 60 ns, which is the time to charge the device's input capacitance before drain current conduction begins.When a gate-to-source voltage (VGS) is applied to bias a MOSFET to the on state, the resistance between the drain and the source of the device is 55mOhm.Input capacitance charging takes time before drain current conduction begins, so the turn-on delay time is 16 ns.Gate-source voltage, or VGS, is the voltage across a FET transistor's gate-source terminal, and can be 20V volts.An electrical device's threshold voltage is the point at which any of its operations will become active, and this transistor has a 2V threshold voltage.This transistor requires a 100V drain to source voltage (Vdss).This device reduces its overall power consumption by using drive voltage (10V).
IRFP150PBF Features
a continuous drain current (ID) of 41A
a drain-to-source breakdown voltage of 100V voltage
the turn-off delay time is 60 ns
single MOSFETs transistor is 55mOhm
a threshold voltage of 2V
a 100V drain to source voltage (Vdss)
IRFP150PBF Applications
There are a lot of Vishay Siliconix
IRFP150PBF applications of single MOSFETs transistors.
- Consumer Appliances
- Lighting
- Uninterruptible Power Supply
- AC-DC Power Supply
- Synchronous Rectification for ATX 1 Server I Telecom PSU
- Motor drives and Uninterruptible Power Supplies
- Micro Solar Inverter
- DC/DC converters
- Power Tools
- Motor Drives and Uninterruptible Power Supples
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