IRFP150NPBF

Manufacturer :

Infineon Technologies

Product Category :

Transistors - FETs, MOSFETs - Single

Power Dissipation-Max :

160W Tc

Additional Feature :

AVALANCHE RATED, HIGH RELIABILITY

Width :

5.3mm

Current - Continuous Drain (Id) @ 25°C :

42A Tc

Drive Voltage (Max Rds On,Min Rds On) :

10V

Resistance :

36mOhm

Operating Temperature :

-55°C~175°C TJ

Number of Pins :

3

Transistor Application :

SWITCHING

Continuous Drain Current (ID) :

42A

Series :

HEXFET®

Mounting Type :

Through Hole

Lead Pitch :

5.45mm

Height :

24.99mm

Max Junction Temperature (Tj) :

175°C

Lead Free :

Contains Lead, Lead Free

Gate to Source Voltage (Vgs) :

20V

Length :

15.875mm

Turn-Off Delay Time :

45 ns

Mount :

Through Hole

Fall Time (Typ) :

40 ns

Nominal Vgs :

4 V

Factory Lead Time :

12 Weeks

Vgs (Max) :

±20V

Avalanche Energy Rating (Eas) :

420 mJ

Rise Time :

56ns

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

Vgs(th) (Max) @ Id :

4V @ 250µA

Transistor Element Material :

SILICON

Number of Elements :

1

Dual Supply Voltage :

100V

FET Type :

N-Channel

Packaging :

Tube

Operating Mode :

ENHANCEMENT MODE

Termination :

Through Hole

Case Connection :

DRAIN

Voltage - Rated DC :

100V

Current Rating :

42A

Published :

1998

Gate Charge (Qg) (Max) @ Vgs :

110nC @ 10V

Input Capacitance (Ciss) (Max) @ Vds :

1900pF @ 25V

Drain to Source Breakdown Voltage :

100V

Element Configuration :

Single

Rds On (Max) @ Id, Vgs :

36m Ω @ 23A, 10V

ECCN Code :

EAR99

Power Dissipation :

140W

Number of Channels :

1

Radiation Hardening :

No

JEDEC-95 Code :

TO-247AC

Package / Case :

TO-247-3

Number of Terminations :

3

RoHS Status :

ROHS3 Compliant

REACH SVHC :

No SVHC

Turn On Delay Time :

11 ns

Threshold Voltage :

4V

Recovery Time :

270 ns