IRFP150MPBF

Manufacturer :

Infineon Technologies

Product Category :

Transistors - FETs, MOSFETs - Single

Fall Time (Typ) :

40 ns

FET Type :

N-Channel

Drain to Source Breakdown Voltage :

100V

Packaging :

Tube

Power Dissipation-Max :

160W Tc

Length :

16.129mm

Power Dissipation :

160W

Vgs (Max) :

±20V

Element Configuration :

Single

Width :

4.826mm

Radiation Hardening :

No

Turn-Off Delay Time :

45 ns

Height :

21.1mm

RoHS Status :

ROHS3 Compliant

Number of Elements :

1

Pulsed Drain Current-Max (IDM) :

140A

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

Vgs(th) (Max) @ Id :

4V @ 250µA

Avalanche Energy Rating (Eas) :

420 mJ

REACH SVHC :

No SVHC

Series :

HEXFET®

Rise Time :

56ns

Factory Lead Time :

12 Weeks

Number of Pins :

3

Continuous Drain Current (ID) :

42A

Threshold Voltage :

4V

Transistor Element Material :

SILICON

Additional Feature :

AVALANCHE RATED, HIGH RELIABILITY, ULTRA-LOW RESISTANCE

Mount :

Through Hole

Package / Case :

TO-247-3

Turn On Delay Time :

11 ns

Resistance :

36mOhm

Operating Mode :

ENHANCEMENT MODE

Mounting Type :

Through Hole

Current - Continuous Drain (Id) @ 25°C :

42A Tc

Input Capacitance (Ciss) (Max) @ Vds :

1900pF @ 25V

ECCN Code :

EAR99

Published :

1998

Nominal Vgs :

4 V

Operating Temperature :

-55°C~175°C TJ

Transistor Application :

SWITCHING

Rds On (Max) @ Id, Vgs :

36m Ω @ 23A, 10V

Number of Terminations :

3

Gate Charge (Qg) (Max) @ Vgs :

110nC @ 10V

Lead Free :

Lead Free

Gate to Source Voltage (Vgs) :

20V

Drive Voltage (Max Rds On,Min Rds On) :

10V

JEDEC-95 Code :

TO-247AC