IRFP140NPBF
- Mfr.Part #
- IRFP140NPBF
- Manufacturer
- Infineon Technologies
- Package / Case
- TO-247-3
- Datasheet
- Download
- Description
- MOSFET N-CH 100V 33A TO247AC
- Stock
- 13,230
- In Stock :
- 13,230
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- Manufacturer :
- Infineon Technologies
- Product Category :
- Transistors - FETs, MOSFETs - Single
- Rds On (Max) @ Id, Vgs :
- 52m Ω @ 16A, 10V
- Gate to Source Voltage (Vgs) :
- 20V
- Operating Temperature :
- -55°C~175°C TJ
- Current - Continuous Drain (Id) @ 25°C :
- 33A Tc
- Number of Elements :
- 1
- Gate Charge (Qg) (Max) @ Vgs :
- 94nC @ 10V
- Vgs (Max) :
- ±20V
- Number of Pins :
- 3
- Power Dissipation-Max :
- 140W Tc
- Voltage - Rated DC :
- 100V
- Mounting Type :
- Through Hole
- Drive Voltage (Max Rds On,Min Rds On) :
- 10V
- Threshold Voltage :
- 4V
- Element Configuration :
- Single
- Package / Case :
- TO-247-3
- Transistor Element Material :
- SILICON
- Factory Lead Time :
- 12 Weeks
- Drain to Source Breakdown Voltage :
- 100V
- Rise Time :
- 39ns
- Dual Supply Voltage :
- 100V
- Packaging :
- Bulk
- Width :
- 5.3086mm
- REACH SVHC :
- No SVHC
- Vgs(th) (Max) @ Id :
- 4V @ 250µA
- Turn-Off Delay Time :
- 44 ns
- Current Rating :
- 27A
- Length :
- 15.87mm
- Radiation Hardening :
- No
- Operating Mode :
- ENHANCEMENT MODE
- Lead Free :
- Contains Lead, Lead Free
- Recovery Time :
- 250 ns
- Additional Feature :
- AVALANCHE RATED
- Moisture Sensitivity Level (MSL) :
- 1 (Unlimited)
- Mount :
- Through Hole
- Input Capacitance (Ciss) (Max) @ Vds :
- 1400pF @ 25V
- Resistance :
- 52mOhm
- FET Type :
- N-Channel
- Turn On Delay Time :
- 8.2 ns
- Published :
- 1998
- Height :
- 20.7mm
- Termination :
- Through Hole
- Series :
- HEXFET®
- Nominal Vgs :
- 4 V
- Number of Terminations :
- 3
- Continuous Drain Current (ID) :
- 33A
- Power Dissipation :
- 94W
- ECCN Code :
- EAR99
- Fall Time (Typ) :
- 33 ns
- Transistor Application :
- SWITCHING
- Case Connection :
- DRAIN
- RoHS Status :
- ROHS3 Compliant
- JEDEC-95 Code :
- TO-247AC
- Datasheets
- IRFP140NPBF

N-Channel Bulk 52m Ω @ 16A, 10V ±20V 1400pF @ 25V 94nC @ 10V TO-247-3
IRFP140NPBF Overview
The maximum input capacitance of this device is 1400pF @ 25V, because the input capacitance of an op amp is defined as the difference between the input terminals with one input grounded.Continuous drain current (ID) is the maximum continuous current (ID) the device can conduct, and it is 33A.When VGS=100V, and ID flows to VDS at 100VVDS, the drain-source breakdown voltage is 100V in this device.Before drain current conduction can begin, the device's turn-off delay time must be charged up to full capacitance. This value is 44 ns.During device turn-on, the input capacitance must be charged for a period of time before drain current conduction can begin, so its delay time is 8.2 ns seconds.Single MOSFETs transistor is the voltage across the gate-source terminal of a transistor that determines the gate-source voltage, VGS.This transistor's threshold voltage is 4V volts, which indicates that a transistor is ready to perform any of its operations at that voltage.Using drive voltage (10V), this device helps reduce its power consumption.
IRFP140NPBF Features
a continuous drain current (ID) of 33A
a drain-to-source breakdown voltage of 100V voltage
the turn-off delay time is 44 ns
a threshold voltage of 4V
IRFP140NPBF Applications
There are a lot of Infineon Technologies
IRFP140NPBF applications of single MOSFETs transistors.
- Micro Solar Inverter
- DC/DC converters
- Power Tools
- Motor Drives and Uninterruptible Power Supples
- Synchronous Rectification
- Battery Protection Circuit
- Telecom 1 Sever Power Supplies
- Industrial Power Supplies
- PFC stages, hard switching PWM stages and resonant switching
- PWM stages for e.g. PC Silverbox, Adapter, LCD & PDP TV,
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