IRFP140N

Manufacturer :

Infineon Technologies

Product Category :

Transistors - FETs, MOSFETs - Single

Case Connection :

DRAIN

Rds On (Max) @ Id, Vgs :

52m Ω @ 16A, 10V

ECCN Code :

EAR99

FET Type :

N-Channel

Mounting Type :

Through Hole

Transistor Element Material :

SILICON

Packaging :

Bulk

Configuration :

SINGLE WITH BUILT-IN DIODE

Package / Case :

TO-247-3

Operating Mode :

ENHANCEMENT MODE

Drain to Source Voltage (Vdss) :

100V

Pulsed Drain Current-Max (IDM) :

110A

Vgs (Max) :

±20V

Additional Feature :

AVALANCHE RATED, FAST SWITCHING

JEDEC-95 Code :

TO-247AC

Vgs(th) (Max) @ Id :

4V @ 250µA

Drive Voltage (Max Rds On,Min Rds On) :

10V

Transistor Application :

SWITCHING

Time@Peak Reflow Temperature-Max (s) :

NOT SPECIFIED

Gate Charge (Qg) (Max) @ Vgs :

94nC @ 10V

Series :

HEXFET®

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

Drain-source On Resistance-Max :

0.052Ohm

Number of Elements :

1

RoHS Status :

Non-RoHS Compliant

DS Breakdown Voltage-Min :

100V

Avalanche Energy Rating (Eas) :

300 mJ

Number of Terminations :

3

JESD-30 Code :

R-PSFM-T3

Current - Continuous Drain (Id) @ 25°C :

33A Tc

Operating Temperature :

-55°C~175°C TJ

Input Capacitance (Ciss) (Max) @ Vds :

1400pF @ 25V

Qualification Status :

Not Qualified

Surface Mount :

No

Published :

1998

Power Dissipation-Max :

140W Tc

Peak Reflow Temperature (Cel) :

NOT SPECIFIED

Drain Current-Max (Abs) (ID) :

33A

Terminal Position :

Single