IRFP064VPBF

Manufacturer :

Infineon Technologies

Product Category :

Transistors - FETs, MOSFETs - Single

Element Configuration :

Single

Rds On (Max) @ Id, Vgs :

5.5mOhm @ 78A, 10V

Number of Pins :

3

Vgs (Max) :

±20V

Package / Case :

TO-247-3

Continuous Drain Current (ID) :

130A

FET Type :

N-Channel

Power Dissipation-Max :

250W Tc

Supplier Device Package :

TO-247AC

Rise Time :

200ns

Input Capacitance (Ciss) (Max) @ Vds :

6760pF @ 25V

Turn On Delay Time :

26 ns

Gate Charge (Qg) (Max) @ Vgs :

260nC @ 10V

REACH SVHC :

No SVHC

Number of Elements :

1

Mount :

Through Hole

Gate to Source Voltage (Vgs) :

20V

Nominal Vgs :

4 V

Published :

2004

Drain to Source Breakdown Voltage :

60V

Fall Time (Typ) :

150 ns

Lead Free :

Lead Free

Vgs(th) (Max) @ Id :

4V @ 250µA

RoHS Status :

RoHS Compliant

Drive Voltage (Max Rds On,Min Rds On) :

10V

Power Dissipation :

250W

Operating Temperature :

-55°C~175°C TJ

Input Capacitance :

6.76nF

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

Max Operating Temperature :

175°C

Mounting Type :

Through Hole

Current - Continuous Drain (Id) @ 25°C :

130A Tc

Turn-Off Delay Time :

100 ns

Series :

HEXFET®

Radiation Hardening :

No

Packaging :

Bulk

Rds On Max :

5.5 mΩ

Min Operating Temperature :

-55°C

Voltage - Rated DC :

60V

Drain to Source Voltage (Vdss) :

60V

Current Rating :

130A

Drain to Source Resistance :

5.5mOhm